List of works - Cheol Seong Hwang

A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption

scientific article published in 2020

Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

An ab initio approach on the asymmetric stacking of GaAs 111 nanowires grown by a vapor-solid method

scientific article published on 01 July 2020

An artificial nociceptor based on a diffusive memristor.

scientific article

Asymmetry in electrical properties of Al-doped TiO2film with respect to bias voltage

article

Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage

scientific article published on 29 April 2020

Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System

Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Atomic Layer Deposition of SrTiO3Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

Atomic Layer Deposition of TiO[sub 2] Films on Ru Buffered TiN Electrode for Capacitor Applications

Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications

Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability

scholarly article by Minha Seo et al published 2008 in Journal of Materials Chemistry

Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory

scientific article published on 15 June 2018

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory

scientific article

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

article published in 2010

Characteristics of a Capacitive Probe Array for Direct Surface Charge Detection

Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100°C) using O3 as an oxygen source

Chemically Conformal ALD of SrTiO[sub 3] Thin Films Using Conventional Metallorganic Precursors

Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O.

scientific article published on 12 December 2016

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor

scientific article published on 11 January 2018

Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode

Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films

scientific article published in May 2014

Controlling the Composition of Doped Materials by ALD: A Case Study for Al-Doped TiO[sub 2] Films

article

Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network

scientific article published on 05 December 2019

Dispersion in Ferroelectric Switching Performance of Polycrystalline HfZrO Thin Films

scientific article published on 08 October 2018

Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications

scientific article published on 21 November 2018

Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films

Electrical properties of high-k HfO2 films on Si1−xGex substrates

article published in 2005

Electrically Benign Ru Wet Etching Method for Fabricating Ru∕TiO[sub 2]∕Ru Capacitor

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

scientific article published on 09 October 2019

Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film

scientific article published on 21 February 2020

Engineering of AlON interlayer in Al 2 O 3 /AlON/In 0.53 Ga 0.47 As gate stacks by thermal atomic layer deposition

Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film

scientific article published on 25 November 2014

Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

article published in 2004

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

scientific article published on 15 June 2020

Growth Behavior of Al-Doped TiO2Thin Films by Atomic Layer Deposition

article published in 2008

Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications

Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O3 as Oxygen Sources

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition

article published in 2010

Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas

High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition

scientific article published on 15 April 2019

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure.

scientific article published on 19 December 2017

Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films

scientific article published on 16 August 2012

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

scientific article published on 15 November 2020

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

scientific article published on 28 December 2017

Improved interface properties of atomic-layer-deposited HfO 2 film on InP using interface sulfur passivation with H 2 S pre-deposition annealing

In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

scientific article published on 28 March 2017

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition

article published in 2010

Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature

article published in 2011

Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant

scholarly article by Seong Keun Kim et al published 2006 in Journal of the Electrochemical Society

Modeling of Negative Capacitance in Ferroelectric Thin Films

scientific article published on 05 June 2019

Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories

scientific article published on 03 December 2018

Nociceptive Memristor.

scientific article published on 10 January 2018

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.

scientific article published on 18 April 2018

Permittivity Enhanced Atomic Layer Deposited HfO2Thin Films Manipulated by a Rutile TiO2Interlayer

article published in 2010

Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

article published in 2009

Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films.

scientific article published on 22 February 2018

Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study

scientific article published on 13 May 2015

Role of Interfacial Reaction in Atomic Layer Deposition of TiO2Thin Films Using Ti(O-iPr)2(tmhd)2on Ru or RuO2Substrates

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition

scientific article published on 7 November 2017

Structurally and Electrically Uniform Deposition of High-k TiO[sub 2] Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition

article published in 2005

Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

scientific article published on 04 December 2014

Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

article published in 2017

Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors

Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2

scientific article published on 01 November 2019

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

scientific article published on 20 November 2017

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory

scientific article

Titanium dioxide thin films for next-generation memory devices

scholarly article by Seong Keun Kim et al published 19 July 2012 in Journal of Materials Research

Transformation of the Crystalline Structure of an ALD TiO[sub 2] Film on a Ru Electrode by O[sub 3] Pretreatment

Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory

scientific article published on 24 September 2019

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

scientific article published on 23 August 2018

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

scientific article published on 7 November 2017

X-ray irradiation induced reversible resistance change in Pt/TiO2/Pt cells

scientific article

List of works by Cheol Seong Hwang

A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption

Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

An ab initio approach on the asymmetric stacking of GaAs 111 nanowires grown by a vapor-solid method

An artificial nociceptor based on a diffusive memristor.

Asymmetry in electrical properties of Al-doped TiO2film with respect to bias voltage

Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage

Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System

Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors

Atomic Layer Deposition of SrTiO3Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

Atomic Layer Deposition of TiO[sub 2] Films on Ru Buffered TiN Electrode for Capacitor Applications

Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications

Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability

Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation

Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Characteristics of a Capacitive Probe Array for Direct Surface Charge Detection

Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100°C) using O3 as an oxygen source

Chemically Conformal ALD of SrTiO[sub 3] Thin Films Using Conventional Metallorganic Precursors

Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films

Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O.

Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor

Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode

Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films

Controlling the Composition of Doped Materials by ALD: A Case Study for Al-Doped TiO[sub 2] Films

Correct extraction of frequency dispersion in accumulation capacitance in InGaAs metal-insulator-semiconductor devices

Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network

Dispersion in Ferroelectric Switching Performance of Polycrystalline HfZrO Thin Films

Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications

Effect of crystalline structure of TiO2 substrates on initial growth of atomic layer deposited Ru thin films

Electrical properties of high-k HfO2 films on Si1−xGex substrates

Electrically Benign Ru Wet Etching Method for Fabricating Ru∕TiO[sub 2]∕Ru Capacitor

Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film

Engineering of AlON interlayer in Al 2 O 3 /AlON/In 0.53 Ga 0.47 As gate stacks by thermal atomic layer deposition

Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film

Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers

Growth Behavior of Al-Doped TiO2Thin Films by Atomic Layer Deposition

Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications

Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O3 as Oxygen Sources

Growth and Characterization of Conducting ZnO Thin Films by Atomic Layer Deposition

Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas

High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate

High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition

Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure.

Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

Improved interface properties of atomic-layer-deposited HfO 2 film on InP using interface sulfur passivation with H 2 S pre-deposition annealing

In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition

Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature

Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant

Modeling of Negative Capacitance in Ferroelectric Thin Films

Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories

Nociceptive Memristor.

Nonvolatile Memory Materials for Neuromorphic Intelligent Machines.

Permittivity Enhanced Atomic Layer Deposited HfO2Thin Films Manipulated by a Rutile TiO2Interlayer

Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films.

Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study

Role of Interfacial Reaction in Atomic Layer Deposition of TiO2Thin Films Using Ti(O-iPr)2(tmhd)2on Ru or RuO2Substrates

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition

Structurally and Electrically Uniform Deposition of High-k TiO[sub 2] Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition

Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Synthesis of SnS Thin Films by Atomic Layer Deposition at Low Temperatures

Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors

Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory

Titanium dioxide thin films for next-generation memory devices

Transformation of the Crystalline Structure of an ALD TiO[sub 2] Film on a Ru Electrode by O[sub 3] Pretreatment