2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness

A comparison of RTO and furnace SiO/sub 2/ time-zero-breakdown characteristics

A new high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

A new parameter to characterize the charge transport regime in Ni/HfO 2 /Si-n + -based RRAMs

A novel biosensor based on hafnium oxide: Application for early stage detection of human interleukin-10

scholarly article by Michael Lee et al published December 2012 in Sensors and Actuators B

A novel three-dimensional biosensor based on aluminum oxide: application for early-stage detection of human interleukin-10.

scientific article published in January 2014

A physically based model for resistive memories including a detailed temperature and variability description

A reliability comparison of RTO and furnace thin SiO2 layers: effect of the oxidation temperature

A semi-empirical model for the tunnel current-voltage characteristics in Al-SiO2-Si(p) structures

A technology for the monolithic fabrication of a pressure sensor and related circuitry

An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters

Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

Analysis of displacement damage effects on MOS capacitors

Analysis of experimental current oscillations in MOS structures using a semi-empirical tunneling model

Annealing Studies of magnetic Czochralski silicon radiation detectors

Beam tests of ATLAS SCT silicon strip detector modules

article in Nuclear Instruments and Methods in Physics Research 538(1–3)

Bias Conditions in Gamma Radiation Assurance Tests of Bipolar Technologies for HEP Applications

article

Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures

Breakdown characteristics of RTO 10 nm SiO/sub 2/ films grown at different temperatures

Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates

article published in 2015

CMOS degradation effects due to electron beam lithography in smart NEMS fabrication

Carrier transport and storage in Si3N4 for metal-nitride-oxide-semiconductor memory applications

Characterisation of p-type detectors for the future Super-LHC

Characterization of N-in-N microstrip radiation detectors fabricated on different silicon substrates

Characterization of edgeless detectors fabricated by dry etching process

Characterization of interface states in thin films of thermally grown SiO2

Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

Characterization of magnetic Czochralski silicon radiation detectors

Characterization of the metal-SiO2-Si interface roughness by electrical methods

article published in 1987

Characterization of the switching in tunnel MISS devices

Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant

Charge trapping and electrical degradation in atomic layer deposited Al2O3 films

Comparative Analysis of MIS Capacitance Structures With High-k Dielectrics Under Gamma, $^{16}$O and p Radiation

Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16 O and p radiation

Comparison between Al 2 O 3 thin films grown by ALD using H 2 O or O 3 as oxidant source

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

scholarly article by H. Ohyama et al published December 2009 in Physica B

Comparison of radiation hardness of P-in-N, N-in-N, and N-in-P silicon pad detectors

Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Defect assessment and leakage control in atomic layer deposited Al 2 O 3 and HfO 2 dielectrics

Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker

article

Design, fabrication, and characterization of a submicroelectromechanical resonator with monolithically integrated CMOS readout circuit

article by J. Verd et al published June 2005 in IEEE Journal of Microelectromechanical Systems

Development of radiation tolerant semiconductor detectors for the Super-LHC

Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

Double Sided 3D Detector Technologies at CNM-IMB

article published in 2006

Edgeless detectors fabricated by dry etching process

Effect of Combined Oxygenation and Gettering on Minority Carrier Lifetime in High-Resistivity FZ Silicon

Effect of Processing Conditions on the Electrical Characteristics of Atomic Layer Deposited Al

Effect of RPT/furnace processing on the minority carrier lifetime in very thin oxide MOS capacitors

Effect of the blistering of ALD Al 2 O 3 films on the silicon surface in Al-Al 2 O 3 -Si structures

article published in 2015

Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides

Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis(dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing

scholarly article by Hector Garcia et al published January 2013 in Journal of Vacuum Science & Technology A

Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

Electrical characterization of multiple leakage current paths in HfO 2 /Al 2 O 3 -based nanolaminates

Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs

Electromechanical model of a resonating nano-cantilever-based sensor for high-resolution and high-sensitivity mass detection

article

Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics

Electron trapping in amorphous Al2O3

Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors

Excess Base Current Model for Gamma-Irradiated SiGe Bipolar Transistors

article

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Exploring the field-effect control of breakdown paths in lateral W/HfO 2 /W structures

Fabrication of cantilever based mass sensors integrated with CMOS using direct write laser lithography on resist

article published in 2004

Field-effect control of breakdown paths in HfO2 based MIM structures

Flip-chip packaging of piezoresistive pressure sensors

Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks

Gamma Radiation Effects on Different Varieties of SiGe:C HBT Technologies

Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs

High-energy proton irradiation effects on tunnelling MOS capacitors

High-pitch metal-on-glass technology for pad pitch adaptation between detectors and readout electronics

Hole trap distribution on 2 MeV electron irradiated high-k dielectrics

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

Hot-carrier reliability in deep-submicrometer LATID NMOSFETs

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

Hot-hole-induced interface states build-up on deep-submicrometer LDD nMOSFETs

Impact of Direct Plasma Hydrogenation on Thermal Donor Formation in n-Type CZ Silicon

Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

scholarly article by J.M. Rafí et al published December 2009 in Physica B

Improvement of pressure-sensor performance and process robustness through reinforcement of the membrane edges

In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures

Influence of the silicon wafer cleaning treatment on the Si/SiO2 interfaces analyzed by infrared spectroscopy

Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

Intra-device statistical parameters in variability-aware modelling of resistive switching devices

Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM

Investigation of the resistive switching behavior in Ni/HfO 2 -based RRAM devices

Modeling the breakdown statistics of Al 2 O 3 /HfO 2 nanolaminates grown by atomic-layer-deposition

Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

Monolithic integration of mass sensing nano-cantilevers with CMOS circuitry

scholarly article by Z.J. Davis et al published August 2003 in Sensors and Actuators A

Nanocantilever based mass sensor integrated with CMOS circuitry

Nanocantilevers with integrated CMOS: effects of electron beam lithography on NMOS transistors

article

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Negative-resistance effect in Al 2 O 3 based and nanolaminated MIS structures

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

Novel Capacitance Biosensor Based on Hafnium Oxide for Interleukin-10 Protein Detection

scholarly article by Michael Lee et al published 2011 in Procedia Engineering

Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors

On the Effects of Localized States and Tunnel Charge in Thin Insulating Films

Optimized technology for the fabrication of piezoresistive pressure sensors

Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs

P-spray implant optimization for the fabrication of n-in-p microstrip detectors

Packaging of silicon pressure sensors for home appliances

Patterning of ALD HfO

Photolithographic packaging of silicon pressure sensors

Pitch adaptors of the ATLAS-SCT Endcap detector modules

Progressive degradation of TiN∕SiON and TiN∕HfO[sub 2] gate stack triple gate SOI nFinFETs subjected to electrical stress

Protection of MOS capacitors during anodic bonding

Proton Radiation Damage on SiGe:C HBTs and Additivity of Ionization and Displacement Effects

Pulsed capacitance-voltage measurements on Al 2 O 3 -based MOS capacitors

Quantized bands model for the determination of the dielectric constant of high-κ layers

RRAM serial configuration for the generation of random bits

article published in 2017

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

article

Radiation and injection effects on metal-oxide-semiconductor devices using the gate-controlled-diode technique

Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration

Radiation hardness evaluation of SiGe HBT technologies for the Front-End electronics of the ATLAS Upgrade

article published in 2007

Radiation-hard semiconductor detectors for SuperLHC

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

Resonant broadening and forward saturation current in metal-insulator-semiconductor interfaces

Resonators with integrated CMOS circuitry for mass sensing applications, fabricated by electron beam lithography

SOI-silicon as structural layer for NEMS applications

SiGe Bipolar Transistors for Harsh Radiation Environments

article

Silicon detectors for the sLHC

Silicon wafer oxygenation from SiO2 layers for radiation hard detectors

Simulation of thermal reset transitions in resistive switching memories including quantum effects

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Soft breakdown in irradiated high-κ nanolaminates

Status of women in physics in Spain in 2011

article

Stress Conditions to Study the Reliability Characteristics of High-k Nanolaminates

Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Study of the admittance hysteresis cycles in TiN/Ti/HfO 2 /W-based RRAM devices

Technology development of p-type microstrip detectors with radiation hard p-spray isolation

article

Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderated p-spray insulations

Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices

The ATLAS semiconductor tracker end-cap module

article

The smart-orifice meter: a mini head meter for volume flow measurement

Thin dielectric films grown by atomic layer deposition: Properties and applications

Thin high-k dielectric layers deposited by ALD

Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Transconductance increase due to charge trapping during hot-carrier stress of nMOSFETs

Transient SPICE simulation of Ni/HfO 2 /Si-n+ resistive memories

article published in 2016

Trap-Assisted Tunneling in MIS and Schottky Structures

Ultimate limits for the radiation hardness of silicon strip detectors for sLHC

Ultra radiation hard silicon detectors for future experiments: 3D and p-type technologies

Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

Unipolar resistive switching behavior in Al2O3/HfO2 multilayer dielectric stacks: fabrication, characterization and simulation

scientific article published on 06 December 2019

Wafer level packaging of silicon pressure sensors

ac capacitance and conductance measurements of two‐terminal metal‐oxide‐semiconductor‐oxide‐semiconductor capacitors on silicon‐on‐insulator substrates