List of works by Josep Montserrat

12E-1 Accelerometer Based on Thin-Film Bulk Acoustic Wave Resonators

4.5kV SiC MOSFET with boron doped gate dielectric

A 4H-SiC high-power-density VJFET as controlled current limiter

A platform for monolithic CMOS-MEMS integration on SOI wafers

A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for mis structures on 4H-SiC

AFM lithography for the definition of nanometre scale gaps: application to the fabrication of a cantilever-based sensor with electrochemical current detection

Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

Accelerated test for reliability analysis of SiC diodes

Analysis of the SiO2 defects originated by phosphorus implantation in MOS structures

Anisotropic etch-stop properties of nitrogen-implanted silicon

Auger quenching-based modulation of electroluminescence from ion-implanted silicon nanocrystals

scientific article published on 14 April 2008

Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

article by J.M. Bluet et al published October 2006 in Superlattices and Microstructures

Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments

Behaviour of 1.2kV SiC JBS diodes under repetitive high power stress

Boron Electrical Activation in SOI Compared to Bulk Si Substrates

Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

Broad range adjustable emission of stacked SiN x/SiO y layers

CMOS-SOI platform for monolithic integration of crystalline silicon MEMS

Characterisation and stabilisation of Pt/TaSix/SiO2/SiC gas sensor

Characterization of High-k Ta[sub 2]Si Oxidized Films on 4H-SiC and Si Substrates as Gate Insulator

Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs

Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes

Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET

Configurational statistical model for the damaged structure of silicon oxide after ion implantation

scientific article published on 01 June 1994

Crystalline silicon cantilevers for piezoresistive detection of biomolecular forces

Design and fabrication of Si technology miicrogenerators for vibrational energy scavenging

Design and implementation of mechanical resonators for optimized inertial electromagnetic microgenerators

Design and implementation of mechanical resonators for optimized inertial electromagnetic microgenerators

Design of a microinductive device integrated within a simple resonant diferential filter for high sensitivity portable biodetectors

Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

article published in 2008

Effect of N+irradiation on the microstructural and magnetic properties of Co/Pd multilayers

Electrical response of MOSiC gas sensors to CO, NO/sub 2/ and C/sub 3/H/sub 8/

Electro-optical Properties of Non-stoichiometric Silicon Nitride Films for Photovoltaic Applications

article by Oriol Blázquez et al published 2014 in Energy Procedia

Electrochemical deposition of Cu and Ni/Cu multilayers in Si Microsystem Technologies

Etching rate modification in silicon oxide by ion implantation and rapid thermal annealing

Experimental analysis of planar edge terminations for high voltage 4H-SiC devices

Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Focused-ion-beam-assisted tuning of thin-film bulk acoustic wave resonators (FBARs)

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

scientific article

High-frequency sensor technologies for inertial force detection based on thin-film bulk acoustic wave resonators (FBAR)

IR Lock-In Thermography Analysis to Evidence Dynamic Mis-Behavior of SiC Device Prototypes

Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation

Impact of boron diffusion on oxynitrided gate oxides in 4H-SiC metal-oxide-semiconductor field-effect transistors

article

Improved electrical characteristics of porous germanium photodiode obtained by phosphorus ion implantation

scholarly article by Emna Akkari et al published 2013 in International Journal of Nanotechnology

Influence of the irradiation temperature on the surface structure and physical/chemical properties of Ar ion-irradiated bulk metallic glasses

Interfacial properties of thermally oxidized Ta2Si on Si

Ion beam synthesis of aluminium nitride: characterisation of thin AIN layers formed in microelectronics aluminium

Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness

Limitations of the spreading resistance technique for ion implant profile measurements

Linear and non linear behavior of mechanical resonators for optimized inertial electromagnetic microgenerators

Linear and non-linear behavior of mechanical resonators for optimized inertial electromagnetic microgenerators

Localized Ion Implantation Through Micro/Nanostencil Masks

article by Luis Guillermo Villanueva et al published September 2011 in IEEE Nanotechnology Magazine

Localized and distributed mass detectors with high sensitivity based on thin-film bulk acoustic resonators

Localized-mass detection based on thin-film bulk acoustic wave resonators (FBAR): Area and mass location aspects

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

article published in 2009

Microinductive Signal Conditioning With Resonant Differential Filters: High-Sensitivity Biodetection Applications

Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

scholarly article by M. Alexandru et al published 31 August 2013 in ECS transactions

Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits

Nano-patterning of perpendicular magnetic recording media by low-energy implantation of chemically reactive ions

Nanometer scale gaps for capacitive transduction improvement on RF-MEMS resonators

Nanopatterning by AFM nano-oxidation of thin aluminum layers as a tool for the prototyping of nanoelectromechanical systems

scholarly article published 29 April 2003

Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs

Optimization of low-resistance strip sensors process and studies of radiation resistance

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

P2K-2 Sensitivity Considerations in Localized Mass Detection Based on Thin-Film Bulk Acoustic Wave Resonators

Parasitic effect on silicon MEMS resonator model parameters

Piezoresistive Microcantilevers for Biomolecular Force Detection

Polysilicon piezoresistive cantilevers for intermolecular force detection

Power cycling analysis method for high-voltage SiC diodes

Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue

Rapid Growth of Oxide Films on SiC by Photo-Assisted Mechanism

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

Si technology based microinductive devices for biodetection applications

SiC Freestanding Micromechanical Structures on Silicon-On-Insulator Substrates

SiC Integrated Circuit Control Electronics for High-Temperature Operation

SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator

Silicon Microdevice for Emulsion Production Using Three-Dimensional Flow Focusing

Structural analysis of buried AlN thin films formed by nitrogen implantation into microelectronics grade aluminium

Structural characterisation of nitrogen ion implantation into silicon for sensor technology

Studies on Floating Contact Press-Pack Diodes Surge Current Capability

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization

System on chip mass sensor based on polysilicon cantilevers arrays for multiple detection

Ta 2 Si short time thermal oxidized layers in N 2 O and O 2 to form high- k gate dielectric on SiC

Ta[sub 2]Si Thermal Oxidation: A Simple Route to a High-k Gate Dielectric on 4H-SiC

Temperature effects on the ruggedness of SiC Schottky diodes under surge current

Thermomechanical Assessment of Die-Attach Materials for Wide Bandgap Semiconductor Devices and Harsh Environment Applications

Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

Time-Resolved Evaporation Rate of Attoliter Glycerine Drops Using On-Chip CMOS Mass Sensors Based on Resonant Silicon Micro Cantilevers

Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

scientific article published on 01 February 2010

Tuneable magnetic patterning of paramagnetic Fe60Al40 (at. %) by consecutive ion irradiation through pre-lithographed shadow masks

Vibrational energy scavenging with Si technology electromagnetic inertial microgenerators

White electroluminescence from C- and Si-rich thin silicon oxides