AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

BAlN thin layers for deep UV applications

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

scientific article published in Science

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

scientific article

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

scientific article published on 9 November 2017

High energy density in artificial heterostructures through relaxation time modulation

scientific article published on 18 April 2024

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop

Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission

Investigation of new approaches for InGaN growth with high indium content for CPV application

Investigation of p-contact performance for indium rich InGaN based light emitting diodes and solar cells

Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

scientific article published on 23 February 2016

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

article by Y. El Gmili et al published 6 January 2017 in Optical materials express

Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

scientific article published on 30 March 2017

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Role of V-pits in the performance improvement of InGaN solar cells

Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

scientific article published on 15 February 2016

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

article

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN