Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates
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| Description | article by Y. El Gmili et al published 6 January 2017 in Optical materials express |
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author: Suresh Sundaram Gilles Patriarche |
| Publication date | January 6, 2017 |
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