Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
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| Description | article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters |
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author: Suresh Sundaram Jean Paul Salvestrini Gilles Patriarche Paul L. Voss Abdallah Ougazzaden Renaud Puybaret Youssef El Gmili |
| Publication date | March 7, 2016 |
| Language | English |
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