Missing/wrong data?
Log in to edit
Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask
article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters
Author/s
author: Suresh Sundaram, Gilles Patriarche, Paul L. Voss, Youssef El Gmili, Abdallah Ougazzaden, Renaud Puybaret, Jean Paul Salvestrini
Work details
Publication date
March 7, 2016
-
-
Language
English
Copyright status
Copyright status information is not available for this work. The copyright status depends on the jurisdiction, the author's date of death and the date the work was created or published.
To learn more about copyright terms in different countries, visit the countries and terms page.