4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride

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A novel high-power pulse PECVD method

A theoretical study of possible point defects incorporated into α-alumina deposited by chemical vapor deposition

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Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

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AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

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Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Bistable defects in low-energy electron irradiated n-type 4H-SiC

article published in 2010

Boron nitride: A new photonic material

article published in 2014

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

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Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

scholarly article by Henrik Pedersen et al published 2 December 2011 in Chemical Reviews

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

article published in 2012

Chloride-Based SiC Epitaxial Growth

Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC

Deep levels in low-energy electron-irradiated 4H-SiC

Deep levels in tungsten doped n-type 3C–SiC

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy

Defects in low-energy electron-irradiated n-type 4H-SiC

Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

scholarly article by Pontus Stenberg et al published April 2018 in Physica B

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

article published in 2009

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer

scholarly article by Mikhail Chubarov et al published 10 October 2011 in Physica Status Solidi

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

article published in 2014

Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

article by Mewlude Imam et al published 2015 in Journal of Materials Chemistry C

Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

scientific article published in September 2021

Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

Growth characteristics of chloride-based SiC epitaxial growth

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates

Growth of High Quality Epitaxial Rhombohedral Boron Nitride

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

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Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

High Power Pulsed Plasma Enhanced Chemical Vapor Deposition: A Brief Overview of General Concepts and Early Results

High proton relaxivity for gadolinium oxide nanoparticles

scientific article

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

IR and quantum-chemical studies of carboxylic acid and glycine adsorption on rutile TiO2 nanoparticles

scientific article published on 12 September 2005

Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Influence of pulse power amplitude on plasma properties and film deposition in high power pulsed plasma enhanced chemical vapor deposition

Initial stages of growth and the influence of temperature during chemical vapor deposition of sp2-BN films

Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

scholarly article by Pontus Stenberg et al published 2017 in Journal of Materials Chemistry C

Metastable Defects in Low-Energy Electron Irradiated n -Type 4H-SiC

Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

On the Existence of Nonfunctional Materials

On the change of preferential growth orientation in chemical vapor deposition of titanium carbide by aromatic hydrocarbon precursors

scholarly article by Henrik Pedersen et al published March 2013 in Journal of Vacuum Science & Technology A

On the effect of silicon in CVD of sp2hybridized boron nitride thin films

article published in 2013

On the effect of water and oxygen in chemical vapor deposition of boron nitride

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

scholarly article by M. Yazdanfar et al published March 2014 in Journal of Crystal Growth

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC

Plasma CVD of hydrogenated boron-carbon thin films from triethylboron

scientific article published in January 2018

Polytype Pure sp2-BN Thin Films As Dictated by the Substrate Crystal Structure

Precursors for carbon doping of GaN in chemical vapor deposition

article published in 2015

Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Review Article: Challenge in determining the crystal structure of epitaxial 0001 oriented sp2-BN films

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

article published in 2017

SiC epitaxy growth using chloride-based CVD

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

scholarly article by Pontus Stenberg et al published 30 January 2017 in Journal of Physical Chemistry C

Simple Chemical Vapor Deposition Experiment

Studying chemical vapor deposition processes with theoretical chemistry

Surface interactions between Y2O3 nanocrystals and organic molecules—an experimental and quantum-chemical study

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Synthesis and characterisation of Gd2O3 nanocrystals functionalised by organic acids

scientific article published in August 2005

The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

The challenge of determining the crystal structure of epitaxial 0001 oriented sp2-BN films

Thermal study of an indium trisguanidinate as a possible indium nitride precursor

scholarly article by Sydney C. Buttera et al published January 2018 in Journal of Vacuum Science & Technology A

Thick Epilayer for Power Devices

Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

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Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition

article by Henrik Pedersen published 15 January 2016 in Chemistry of Materials

Towards biocompatibility of RE2O3 nanocrystals - water and organic molecules chemisorbed on Gd2O3 and Y2O3 nanocrystals studied by quantum-chemical computations

scientific article

Trimethylboron as Single-Source Precursor for Boron–Carbon Thin Film Synthesis by Plasma Chemical Vapor Deposition

Understanding the catalytic effects of H2S on CVD-growth of α-alumina: Thermodynamic gas-phase simulations and density functional theory

article published in 2011

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

Very high epitaxial growth rate of SiC using MTS as chloride-based precursor

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

article published in 2007