A Multiscale Modeling of Triple-Heterojunction Tunneling FETs ⬇️

A high-current InP-channel triple heterojunction tunnel transistor design

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Adaptive quadrature for sharply spiked integrands

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

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An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu c

Anisotropic strain in SmSe and SmTe: Implications for electronic transport ⬇️

scholarly article in Physical Review B, vol. 90 no. 24, December 2014

Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGexnanowires

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Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

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Brillouin zone unfolding method for effective phonon spectra ⬇️

scholarly article in Physical Review B, vol. 90 no. 20, November 2014

Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

article published in 2017

Control of interlayer physics in 2H transition metal dichalcogenides

Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

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Design and Simulation of Two-Dimensional Superlattice Steep Transistors

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Design of high-current L-valley GaAs=AlAs 0.56 Sb 0.44 /InP (111) ultra-thin-body nMOSFETs

Design principles for HgTe based topological insulator devices

Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

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Dynamical nonlinearity in strained InGaAs (311)A sidewall quantum wires

Electron transport in nano-scaled piezoelectronic devices

scholarly article by Zhengping Jiang et al published 13 May 2013 in Applied Physics Letters

Electronic and optical properties of [N11] grown nanostructures

scientific article published in April 2004

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

Enhanced valence force field model for the lattice properties of gallium arsenide

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Exploring channel doping designs for high-performance tunneling FETs

Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

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Grain boundary resistance in nanoscale copper interconnections

High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

High-current InP-based triple heterojunction tunnel transistors

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Incoherent transport in NEMO5: realistic and efficient scattering on phonons

Low rank approximation method for efficient Green's function calculation of dissipative quantum transport

Microscopic Description of Nanostructures Grown on (N11) Surfaces

scientific article published in December 2003

Multiscale transport simulation of nanoelectronic devices with NEMO5

scientific article published in August 2016

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

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NEMO5: Predicting MoS 2 heterojunctions

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

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Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

P-Type Tunnel FETs With Triple Heterojunctions ⬇️

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]

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Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method ⬇️

article published in 2016

Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

Quantum transport in NEMO5: Algorithm improvements and high performance implementation

Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness ⬇️

Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

Surface Passivation in Empirical Tight Binding

The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.

scientific article

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution ⬇️

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Transferable tight-binding model for strained group IV and III-V materials and heterostructures ⬇️

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Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs

Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations