A high-current InP-channel triple heterojunction tunnel transistor design

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Adaptive quadrature for sharply spiked integrands

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

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An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu c

Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

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Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark

Control of interlayer physics in 2H transition metal dichalcogenides

Design and Simulation of Two-Dimensional Superlattice Steep Transistors

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Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

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Design of high-current L-valley GaAs=AlAs 0.56 Sb 0.44 /InP (111) ultra-thin-body nMOSFETs

Design of three-well indirect pumping terahertz quantum cascade lasers for high optical gain based on nonequilibrium Green’s function analysis

Design principles for HgTe based topological insulator devices

Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

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Electron transport in nano-scaled piezoelectronic devices

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Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

Enhanced valence force field model for the lattice properties of gallium arsenide

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Explicit screening full band quantum transport model for semiconductor nanodevices

Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

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General Retarded Contact Self-energies in and beyond the Non-equilibrium Green's Functions Method

In-surface confinement of topological insulator nanowire surface states

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Incoherent transport in NEMO5: realistic and efficient scattering on phonons

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

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Low rank approximation method for efficient Green's function calculation of dissipative quantum transport

Multi-scale, multi-physics NEGF quantum transport for nitride LEDs

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

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NEMO5: Predicting MoS 2 heterojunctions

NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes

Non-equilibrium Green's functions method: Non-trivial and disordered leads

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

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Probing scattering mechanisms with symmetric quantum cascade lasers

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Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures ⬇️

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Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]

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Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

Quantum transport in NEMO5: Algorithm improvements and high performance implementation

Rough interfaces in THz quantum cascade lasers

Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

Surface Passivation in Empirical Tight Binding

Terahertz quantum cascade lasers based on type II InGaAs/GaAsSb/InP

The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations ⬇️

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Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution ⬇️

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Transferable tight-binding model for strained group IV and III-V materials and heterostructures ⬇️

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