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List of works by Jean Paul Salvestrini

BAlN thin layers for deep UV applications

Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN

scientific article published on 25 November 2020

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Experimental Study and Device Design of NO, NO2, and NH3Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

scientific article

Frequency dispersion of electro-optical properties over a wide range by means of time-response analysis

scientific article published on 01 May 2003

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

scientific article published on 9 November 2017

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Investigation of new approaches for InGaN growth with high indium content for CPV application

Investigation of the Performance of HEMT-Based NO, NO₂ and NH₃ Exhaust Gas Sensors for Automotive Antipollution Systems.

scientific article published on 23 February 2016

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

scientific article published on 30 March 2017

New versatile and linear optical sensor based on electro-optical modulation and compensation

scientific article

Role of V-pits in the performance improvement of InGaN solar cells

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

scientific article published on 15 February 2016

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

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