Search filters

List of works by Robert M Wallace

A density-functional theory study of tip electronic structures in scanning tunneling microscopy

scientific article published on February 15, 2013

A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides

scientific article

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone

scientific article published on 21 July 2014

Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone

scientific article published on 06 March 2012

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene

scientific article published on 17 November 2014

Carbon-based supercapacitors produced by activation of graphene

scientific article

Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics

scientific article published on 19 June 2017

Contact Engineering High-Performance n-Type MoTe2 Transistors

scientific article published on 13 August 2019

Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices

scientific article published on 01 December 2009

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

scientific article published on 5 August 2016

Defect-dominated doping and contact resistance in MoS2

scientific article published on 06 February 2014

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

scientific article published on 8 November 2017

Dislocation driven spiral and non-spiral growth in layered chalcogenides

scientific article published on 01 August 2018

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

scientific article published on 11 June 2019

Fermi Level Manipulation through Native Doping in the Topological Insulator BiSe

scientific article published on 08 June 2018

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

scientific article published on 25 February 2015

HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.

scientific article published on 17 October 2013

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy

scientific article published on 22 December 2014

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

scientific article published on 18 July 2018

High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃

scientific article published on 30 March 2019

Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition

article

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments

scientific article published on 09 May 2014

Hole selective MoOx contact for silicon solar cells.

scientific article published on 27 January 2014

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

scientific article published on 26 August 2019

Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers.

scientific article

Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films.

scientific article

In situ TEM characterization of shear-stress-induced interlayer sliding in the cross section view of molybdenum disulfide.

scientific article published on 17 December 2014

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

scientific article published on 11 December 2018

Metal contacts on physical vapor deposited monolayer MoS2.

scientific article

Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control

scientific article published on 04 May 2012

MoS2-Titanium Contact Interface Reactions

scientific article

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts

scientific article

New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.

scientific article published on 10 March 2017

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.

scientific article published on 26 June 2017

Realistic metal-graphene contact structures

scientific article published on 26 November 2013

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

scientific article published on 23 January 2018

Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition

scientific article published on 12 March 2012

Scalable BEOL compatible 2D tungsten diselenide

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

scientific article published on 16 October 2017

Seeding atomic layer deposition of alumina on graphene with yttria.

scientific article

Silicon interfacial passivation layer chemistry for high-k/InP interfaces

scientific article published on 30 April 2014

Structure of ultra-thin diamond-like carbon films grown with filtered cathodic arc on Si(001).

scientific article published in January 2010

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices.

scientific article

Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2

scientific article published on 16 October 2019

The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces

scientific article published on 27 March 2014

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films

scientific article published on June 21, 2012

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

scientific article published on 13 April 2016

Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping

Two-dimensional gallium nitride realized via graphene encapsulation

scientific article published on 29 August 2016

Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer

Unusual oxidation-induced core-level shifts at the HfO/InP interface

scientific article published in Scientific Reports