List of works - Chenming Hu

Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films

scientific article (publication date: 2007)

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Field-effect transistors built from all two-dimensional material components

scientific article published on 7 May 2014

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

scientific article (publication date: 2000)

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

scientific article published in December 2010

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V th matching and CMOS-compatible 3DFETs

Interfacial layer-free ZrO 2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10 −3 A/cm 2 gate leakage, SS =85 mV/dec, I on /I off =6×10 5 , and high strain response

scientific article published in December 2012

MoS2 transistors with 1-nanometer gate lengths

scientific article published on 6 October 2016

Monolithic 3D CMOS Using Layered Semiconductors

scientific article published on 2 February 2016

Rapid (<5 min) Identification of Pathogen in Human Blood by Electrokinetic Concentration and Surface-Enhanced Raman Spectroscopy ⬇️

scientific article published on January 1, 2013

Single crystal functional oxides on silicon

scientific article published on 8 February 2016

Spatially resolved steady-state negative capacitance

scientific article published on 14 January 2019

List of works by Chenming Hu

Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Field-effect transistors built from all two-dimensional material components

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V th matching and CMOS-compatible 3DFETs

Interfacial layer-free ZrO 2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10 −3 A/cm 2 gate leakage, SS =85 mV/dec, I on /I off =6×10 5 , and high strain response

MoS2 transistors with 1-nanometer gate lengths

Monolithic 3D CMOS Using Layered Semiconductors

Rapid (<5 min) Identification of Pathogen in Human Blood by Electrokinetic Concentration and Surface-Enhanced Raman Spectroscopy ⬇️

Single crystal functional oxides on silicon

Spatially resolved steady-state negative capacitance

Sub 50-nm FinFET: PMOS

Sub-50 nm P-channel FinFET

List of works by Chenming Hu

Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films

Electrical characteristics of ferroelectric PZT thin films for DRAM applications

Field-effect transistors built from all two-dimensional material components

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V th matching and CMOS-compatible 3DFETs

Interfacial layer-free ZrO 2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10 −3 A/cm 2 gate leakage, SS =85 mV/dec, I on /I off =6×10 5 , and high strain response

MoS2 transistors with 1-nanometer gate lengths

Monolithic 3D CMOS Using Layered Semiconductors

Rapid (&lt;5 min) Identification of Pathogen in Human Blood by Electrokinetic Concentration and Surface-Enhanced Raman Spectroscopy ⬇️

Single crystal functional oxides on silicon

Spatially resolved steady-state negative capacitance

Sub 50-nm FinFET: PMOS

Sub-50 nm P-channel FinFET

Rapid (<5 min) Identification of Pathogen in Human Blood by Electrokinetic Concentration and Surface-Enhanced Raman Spectroscopy ⬇️