Interfacial layer-free ZrO 2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10 −3 A/cm 2 gate leakage, SS =85 mV/dec, I on /I off =6×10 5 , and high strain response
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| Description | scientific article published in December 2012 |
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author: Huang-Siang Lan Chenming Hu |
| Publication date | December 2012 |
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