List of works - Eva Monroy

AlGaN-based UV photodetectors

article published in 2001

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

scientific article published on 01 September 2010

Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity

article published in 2011

Luminescence properties of highly Si-doped AlN

article published in 2006

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

GaN quantum dots doped with Eu

Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band

scientific article published on 05 October 2015

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots

article published in 2004

AlGaN Photodiodes For Monitoring Solar UV Radiation

scholarly article

Third order nonlinear susceptibility of InN at near band-gap wavelengths

High visible rejection AlGaN photodetectors on Si(111) substrates

Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy

Wet etching of GaN grown by molecular beam epitaxy on Si(111)

article published in 2000

Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

GaN quantum dots as optical transducers for chemical sensors

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

scholarly article by A. Das et al published 3 May 2010 in Applied Physics Letters

High frequency (f=2.37 GHz) room temperature operation of 1.55 [micro sign]m AlN∕GaN-based intersubband detector

article published in 2007

Morphological properties of GaN quantum dots doped with Eu

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Time response analysis of ZnSe-based Schottky barrier photodetectors

article

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Identification of III–N nanowire growth kinetics via a marker technique

scientific article published on 05 July 2010

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

The microstructure and properties of InN layers

In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

scholarly article by F. B. Naranjo et al published 17 January 2011 in Applied Physics Letters

Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures

article published in 2006

Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(111) and GaN templates by RF sputtering

Design of broadband high-efficiency superconducting-nanowire single photon detectors

scholarly article by L Redaelli et al published 6 May 2016 in Superconductor Science and Technology

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

Photodetectors based on intersubband transitions using III-nitride superlattice structures

scientific article

Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Optical and morphological properties ofGaNquantum dots doped withTm

scholarly article in Physical Review B, vol. 71 no. 11, March 2005

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs.

scientific article published in November 2013

Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds

Spectroscopy of the electron states in self-organized GaN/AlN quantum dots

Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures

scientific article published on 18 February 2014

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

Diamond UV detectors for future solar physics missions

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures

article published in 2006

List of works by Eva Monroy

AlGaN-based UV photodetectors

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity

Luminescence properties of highly Si-doped AlN

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

GaN quantum dots doped with Eu

Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots

AlGaN Photodiodes For Monitoring Solar UV Radiation

Third order nonlinear susceptibility of InN at near band-gap wavelengths

High visible rejection AlGaN photodetectors on Si(111) substrates

Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy

Wet etching of GaN grown by molecular beam epitaxy on Si(111)

Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

GaN quantum dots as optical transducers for chemical sensors

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

High frequency (f=2.37 GHz) room temperature operation of 1.55 [micro sign]m AlN∕GaN-based intersubband detector

Morphological properties of GaN quantum dots doped with Eu

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Time response analysis of ZnSe-based Schottky barrier photodetectors

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Identification of III–N nanowire growth kinetics via a marker technique

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

The microstructure and properties of InN layers

In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures

Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(111) and GaN templates by RF sputtering

Design of broadband high-efficiency superconducting-nanowire single photon detectors

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

Photodetectors based on intersubband transitions using III-nitride superlattice structures

Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Optical and morphological properties ofGaNquantum dots doped withTm

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs.

Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds

Spectroscopy of the electron states in self-organized GaN/AlN quantum dots

Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

Diamond UV detectors for future solar physics missions

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures