List of works - Eva Monroy

Wide-bandgap semiconductor ultraviolet photodetectors

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

article by P. K. Kandaswamy et al published November 2008 in Journal of Applied Physics

Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

scholarly article in Physical Review B, vol. 73 no. 12, March 2006

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

scholarly article by F. Guillot et al published 15 August 2006 in Journal of Applied Physics

Room-Temperature Photodetection Dynamics of Single GaN Nanowires

article

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

scholarly article by Maria Tchernycheva et al published 5 September 2005 in Applied Physics Letters

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

article by A. Vardi et al published 3 April 2006 in Applied Physics Letters

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

article published in 2003

Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

scholarly article in Physical Review B, vol. 74 no. 4, July 2006

III-nitride semiconductors for intersubband optoelectronics: a review

article

Strain distribution in GaN∕AlN quantum-dot superlattices

AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity

article

Terahertz intersubband absorption in GaN/AlGaN step quantum wells

article by H. Machhadani et al published 8 November 2010 in Applied Physics Letters

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

GaN-based solar-ultraviolet detection instrument

scientific article published on 01 August 1998

Electron confinement in strongly coupled GaN∕AlN quantum wells

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

scientific article published on 05 October 2012

III nitrides and UV detection

Optically nonlinear effects in intersubband transitions of GaN∕AlN-based superlattice structures

article published in 2007

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

AlGaN metal–semiconductor–metal photodiodes

High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Plastic strain relaxation of nitride heterostructures

GaN-based quantum dot infrared photodetector operating at 1.38 [micro sign]m

Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

Photoconductive gain modelling of GaN photodetectors

article

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

Si-doped AlxGa1-xN photoconductive detectors

article

Plasma-assisted molecular-beam epitaxy of AlN(112¯2) on m sapphire

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

article published in 2010

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

article by M. Beeler et al published 26 August 2013 in Applied Physics Letters

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

Modification of GaN(0001) growth kinetics by Mg doping

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

scholarly article by N. Kheirodin et al published May 2008 in IEEE Photonics Technology Letters

Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

article

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

article published in 2004

GaN/AlGaN intersubband optoelectronic devices

High-quality visible-blind AlGaN p-i-n photodiodes

article

Strain relaxation in short-period polar GaN/AlN superlattices

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

article published in 2011

List of works by Eva Monroy

Wide-bandgap semiconductor ultraviolet photodetectors

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

Room-Temperature Photodetection Dynamics of Single GaN Nanowires

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

III-nitride semiconductors for intersubband optoelectronics: a review

Strain distribution in GaN∕AlN quantum-dot superlattices

AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity

Terahertz intersubband absorption in GaN/AlGaN step quantum wells

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

GaN-based solar-ultraviolet detection instrument

Electron confinement in strongly coupled GaN∕AlN quantum wells

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

III nitrides and UV detection

Optically nonlinear effects in intersubband transitions of GaN∕AlN-based superlattice structures

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

AlGaN metal–semiconductor–metal photodiodes

High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Plastic strain relaxation of nitride heterostructures

GaN-based quantum dot infrared photodetector operating at 1.38 [micro sign]m

Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

Photoconductive gain modelling of GaN photodetectors

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

Si-doped AlxGa1-xN photoconductive detectors

Plasma-assisted molecular-beam epitaxy of AlN(112¯2) on m sapphire

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

Modification of GaN(0001) growth kinetics by Mg doping

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

GaN/AlGaN intersubband optoelectronic devices

High-quality visible-blind AlGaN p-i-n photodiodes

Strain relaxation in short-period polar GaN/AlN superlattices

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy