List of works - Gerhard Klimeck

Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

article published in 2004

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

article

Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

scientific article published in July 2001

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

scientific article (publication date: 12 October 1998)

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

scholarly article in Physical Review B, vol. 80 no. 3, July 2009

Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

Electronic Properties of Silicon Nanowires

article

Noninvasive spatial metrology of single-atom devices

scientific article published on 18 April 2013

Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime

article

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

article

Valley splitting in Si quantum dots embedded in SiGe

Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

article

Structures and energetics of silicon nanotubes from molecular dynamics and density functional theory

article

Coherent control of a single ²⁹Si nuclear spin qubit

scientific article published on 9 December 2014

Enhanced valence force field model for the lattice properties of gallium arsenide

article

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

scientific article

Generation and intensity-correlation measurements of the real Gaussian field

scientific article published on 01 June 1990

Lifetime-enhanced transport in silicon due to spin and valley blockade.

scientific article published on 19 September 2011

Atomistic modeling of metallic nanowires in silicon

scientific article

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

article

Experimental verification of an optical negative-index material

Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires

scientific article published on 10 December 2014

Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results

article

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Probing scattering mechanisms with symmetric quantum cascade lasers

scientific article

Practical application of zone-folding concepts in tight-binding calculations

scholarly article in Physical Review B, vol. 71 no. 11, March 2005

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

scientific article

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

article published in 2011

Computing entries of the inverse of a sparse matrix using the FIND algorithm

Strain effects in large-scale atomistic quantum dot simulations

Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

scholarly article in Physical Review B, vol. 66 no. 23, December 2002

Valley splitting in finite barrier quantum wells

scholarly article in Physical Review B, vol. 77 no. 24, June 2008

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

article

Non-primitive rectangular cells for tight-binding electronic structure calculations

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

article

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

article

Computational Electronics

article published in 2010

Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

article

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

article

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution

article

Mapping donor electron wave function deformations at a sub-Bohr orbit resolution

scientific article published on 4 September 2009

Valley splitting in V-shaped quantum wells

article published in 2005

Design space for low sensitivity to size variations in [110] PMOS nanowire devices: the implications of anisotropy in the quantization mass

scientific article published in February 2009

Characterizing Si:P quantum dot qubits with spin resonance techniques

scientific article published on 23 August 2016

Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

scholarly article by Giuseppe C. Tettamanzi et al published April 2011 in IEEE Electron Device Letters

Bandstructure Effects in Silicon Nanowire Hole Transport

article published in 2008

List of works by Gerhard Klimeck

Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

Electronic Properties of Silicon Nanowires

Noninvasive spatial metrology of single-atom devices

Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Valley splitting in Si quantum dots embedded in SiGe

Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

Structures and energetics of silicon nanotubes from molecular dynamics and density functional theory

Coherent control of a single ²⁹Si nuclear spin qubit

Enhanced valence force field model for the lattice properties of gallium arsenide

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

Generation and intensity-correlation measurements of the real Gaussian field

Lifetime-enhanced transport in silicon due to spin and valley blockade.

Atomistic modeling of metallic nanowires in silicon

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Experimental verification of an optical negative-index material

Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires

Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Probing scattering mechanisms with symmetric quantum cascade lasers

Practical application of zone-folding concepts in tight-binding calculations

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

Computing entries of the inverse of a sparse matrix using the FIND algorithm

Strain effects in large-scale atomistic quantum dot simulations

Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

Valley splitting in finite barrier quantum wells

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

Non-primitive rectangular cells for tight-binding electronic structure calculations

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

Computational Electronics

Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution

Mapping donor electron wave function deformations at a sub-Bohr orbit resolution

Valley splitting in V-shaped quantum wells

Design space for low sensitivity to size variations in [110] PMOS nanowire devices: the implications of anisotropy in the quantization mass

Characterizing Si:P quantum dot qubits with spin resonance techniques

Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

Bandstructure Effects in Silicon Nanowire Hole Transport

Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires