List of works - Gerhard Klimeck

A single-atom transistor

scientific article

Silicon quantum electronics

scholarly article by Floris A. Zwanenburg et al published 10 July 2013 in Reviews of Modern Physics

Ohm's law survives to the atomic scale

scientific article

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

scientific article published on 15 June 2008

Single and multiband modeling of quantum electron transport through layered semiconductor devices

article

Valence band effective-mass expressions in thesp3d5s*empirical tight-binding model applied to a Si and Ge parametrization

article

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting.

scientific article published in January 2013

Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

scholarly article in Physical Review B, vol. 66 no. 12, September 2002

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

article

High precision quantum control of single donor spins in silicon

scientific article published on 20 July 2007

Spin blockade and exchange in Coulomb-confined silicon double quantum dots

scientific article published on 13 April 2014

Spatially resolving valley quantum interference of a donor in silicon

scientific article published on 6 April 2014

Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations

scholarly article in Physical Review B, vol. 74 no. 20, November 2006

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

article

Electrically controlling single-spin qubits in a continuous microwave field

scientific article published on 10 April 2015

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

article

Valley splitting in strained silicon quantum wells

Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

scholarly article in Physical Review B, vol. 69 no. 4, January 2004

Electrically Tunable Bandgaps in Bilayer MoS₂.

scientific article published on 11 November 2015

Si tight-binding parameters from genetic algorithm fitting

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

Quantum device simulation with a generalized tunneling formula

article

Performance analysis of a Ge/Si core/shell nanowire field-effect transistor

scientific article published on 28 February 2007

Efficient and realistic device modeling from atomic detail to the nanoscale

article

Quantitative simulation of a resonant tunneling diode

article

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

article

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

scholarly article by M. Usman et al published May 2009 in IEEE Nanotechnology Magazine

nanoHUB.org: Advancing Education and Research in Nanotechnology

article published in 2008

Orbital Stark effect and quantum confinement transition of donors in silicon

scientific article published on 9 October 2009

Bandstructure Effects in Silicon Nanowire Electron Transport

article published in 2008

Silicon quantum processor with robust long-distance qubit couplings.

scientific article published on 6 September 2017

Conductance spectroscopy in coupled quantum dots

scientific article

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Quantum simulation of the Hubbard model with dopant atoms in silicon

scientific article published on 20 April 2016

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

article

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes

scientific article published in March 1993

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Resonant tunneling through quantum-dot arrays

article

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

scholarly article in Physical Review B, vol. 84 no. 20, November 2011

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

scientific article published on 27 June 2016

Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization

scholarly article in Physical Review B, vol. 76 no. 3, July 2007

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

scholarly article in Physical Review B, vol. 83 no. 19, May 2011

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

article

Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

article by Tillmann Kubis et al published 27 December 2010 in Applied Physics Letters

TeraGrid Science Gateways and Their Impact on Science

Transmission resonances and zeros in multiband models

article

Spin-lattice relaxation times of single donors and donor clusters in silicon

scientific article published on 11 December 2014

Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

article

List of works by Gerhard Klimeck

A single-atom transistor

Silicon quantum electronics

Ohm's law survives to the atomic scale

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Single and multiband modeling of quantum electron transport through layered semiconductor devices

Valence band effective-mass expressions in thesp3d5s*empirical tight-binding model applied to a Si and Ge parametrization

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting.

Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

High precision quantum control of single donor spins in silicon

Spin blockade and exchange in Coulomb-confined silicon double quantum dots

Spatially resolving valley quantum interference of a donor in silicon

Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

Electrically controlling single-spin qubits in a continuous microwave field

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

Valley splitting in strained silicon quantum wells

Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

Electrically Tunable Bandgaps in Bilayer MoS₂.

Si tight-binding parameters from genetic algorithm fitting

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

Quantum device simulation with a generalized tunneling formula

Performance analysis of a Ge/Si core/shell nanowire field-effect transistor

Efficient and realistic device modeling from atomic detail to the nanoscale

Quantitative simulation of a resonant tunneling diode

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

nanoHUB.org: Advancing Education and Research in Nanotechnology

Orbital Stark effect and quantum confinement transition of donors in silicon

Bandstructure Effects in Silicon Nanowire Electron Transport

Silicon quantum processor with robust long-distance qubit couplings.

Conductance spectroscopy in coupled quantum dots

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Quantum simulation of the Hubbard model with dopant atoms in silicon

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Resonant tunneling through quantum-dot arrays

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

TeraGrid Science Gateways and Their Impact on Science

Transmission resonances and zeros in multiband models

Spin-lattice relaxation times of single donors and donor clusters in silicon

Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions