Band structure of germanium carbides for direct bandgap silicon photonics

scholarly article by C. A. Stephenson et al published 7 August 2016 in Journal of Applied Physics

Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy

article

Broadening of interband transitions in InGaN quantum wells

Broadening of intersubband and interband transitions in InGaN/AlInN multi-quantum wells

article published in 2010

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

scientific article published in May 2010

Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells

scientific article published on 19 May 2008

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

scientific article published on 7 February 2011

Carrier dynamics in type-II GaAsSb/GaAs quantum wells

scientific article published on 5 April 2012

Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

Change in photoluminescence spectra of Eu-doped GaN powders due to the aggregation of nanosized grains into micrometer-sized conglomerations

scientific article published on 6 February 2006

Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance

Contactless electroreflectance and photoluminescence of InAs quantum dots with GaInNAs barriers grown on GaAs substrate

Contactless electroreflectance investigation of energy levels in a 1.3μm emitting laser structure with the gain medium composed of InAsN quantum dots embedded in GaInNAs∕GaAs quantum wells

Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions

Contactless electroreflectance of InAs∕In0.53Ga0.23Al0.24As quantum dashes grown on InP substrate: Analysis of the wetting layer transition

Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues

Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

scientific article published in February 2008

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation

Contactless modulated reflectivity of quasi 0D self-assembled semiconductor structures

scientific article published in February 2007

Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy

Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers

Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations

article

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers

Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing

scholarly article published October 2012

Efficient energy transfer in InAs quantum dash based tunnel-injection structures at low temperatures

Electromodulation spectroscopy of In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum wells

Electromodulation spectroscopy of optical transitions and electric field distribution in GaN/AlGaN/GaN transistor heterostructures with various AlGaN layer thicknesses

article

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells

Electronic Band Structure ofGaNxPyAs1−x−yHighly Mismatched Alloys: Suitability for Intermediate-Band Solar Cells

Energy Transfer Between Nanocrystalline Host and Eu[sup 3+] Ions in GaN:Eu[sup 3+] Powders

Energy difference between electron subbands in AlInN∕GaInN quantum wells studied by contactless electroreflectance spectroscopy

Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells

Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well

scientific article published on 10 January 2013

Erratum: “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures” [Appl. Phys. Lett. 107, 262107 (2016)]

scholarly article published in Applied Physics Letters

Exciton Binding Energy of Two-Dimensional Highly Luminescent Colloidal Nanostructures Determined from Combined Optical and Photoacoustic Spectroscopies

scientific article published on 10 June 2019

Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55μm emission

Explanation of annealing-induced blueshift of the optical transitions in GaInAsN/GaAs quantum wells

Fast measurements of photoreflectance spectra by using multi-channel detector

Fine Structure of the Localized Emission from GaInNAs Layers Studied by Micro-Photoluminescence

GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayers

article published in 2008

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

article published in 2013

Growth and characterization of InGaN for photovoltaic devices

article published in 2011

Growth and characterization of ingan for photovoltaic devices

Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells

Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

scientific article published on 5 September 2013

Infrared photomodulation spectroscopy of an In 0.22Ga 0.78Sb/GaSb single quantum well

Infrared photoreflectance spectroscopy of AlGaAsSb-, InGaSb-based quantum wells

Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy

article

Investigations of GaN surface quantum well in AlGaN∕GaN transistor heterostructures by contactless electroreflectance spectroscopy

article

Magneto-optical properties of GaBiAs layers

article published in 2014

Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

scientific article

Micro-photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations

Model of hopping excitons in GaInNAs: simulations of sharp lines in micro-photoluminescence spectra and their dependence on the excitation power and temperature

scientific article published on 04 May 2011

Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures

Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures

Multicolor emission from intermediate band semiconductor ZnO1-xSex.

scientific article published on 13 March 2017

Near IR Refractive Index for GaInN Heavily Doped with Silicon

Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction

Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy

On the mechanisms of energy transfer between quantum well and quantum dashes

On the tunnel injection of excitons and free carriers from In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well to InAs∕In0.53Ga0.23Al0.24As quantum dashes

Optical Properties of In2 xGa2-2 xO3 Nanowires Revealed by Photoacoustic Spectroscopy

scientific article published on 17 May 2019

Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates

Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures

Optical properties of GaN nanocrystals embedded into silica matrices

Optically probed wetting layer in InAs/InGaAlAs/InP quantum-dash structures

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells

article by Jan Misiewicz et al published March 2005 in Microelectronics Journal

Photoluminescence from GaN nanopowder: The size effect associated with the surface-to-volume ratio

Photoluminescence from InAsN quantum dots embedded in GaInNAs/GaAs quantum wells

Photomodulated transmittance of GaBiAs layers grown on (001) and (311)B GaAs substrates

Photomodulation spectroscopy applied to low-dimensional semiconductor structures

Photoreflectance and contactless electroreflectance of an InAs quantum dash laser structure

Photoreflectance and photoluminescence study of Ga0.76In0.24Sb/GaSb single quantum wells: Band structure and thermal quenching of photoluminescence

Photoreflectance and photoluminescence study of step-like GaInNAs/GaInNAs/GaAs quantum wells

Photoreflectance investigation of InAs quantum dashes embedded in In0.53Ga0.47As∕In0.53Ga0.23Al0.24As quantum well grown on InP substrate

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Photoreflectance investigations of a donor-related transition in AlGaN∕GaN transistor structures

article

Photoreflectance investigations of energy level structure of InAs quantum dashes embedded in InGaAs/InGaAlAs quantum well grown on InP substrate

Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells

Photoreflectance spectroscopy of step-like GaInNAs/GaInNAs/GaAs quantum wells

Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP

scientific article published in 2021

Photoreflectance study of p-type GaN layers

Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN0.02As0.98, Ga0.95In0.05N0.02As0.98, and GaN0.02As0.90Sb0.08layers

scientific article published on 3 September 2013

Photoreflectance-probed excited states in InAs∕InGaAlAs quantum dashes grown on InP substrate

Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys

scientific article published on 25 August 2016

Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

Room temperature contactless electroreflectance of the ground and excited state transitions in Ga0.76In0.24As0.08Sb0.92∕GaSb single quantum wells of various widths

Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas

Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies

Size Shrinkage of GaN Nanocrystalline Grains Induced by Eu Doping

Spectroscopic studies of samarium doped CdF2 crystal

Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate

Study of the activation process of Mg dopant in GaN:Mg layers

Surface- and volume-related excitation of Eu-doped nanocrystalline GaN powders

Synthesis and optical properties of Eu3+ and Tb3+ doped GaN nanocrystallite powders

article published in 2006

Synthesis, structure and optical properties of GaN nanocrystallites

Temperature evolution of photoluminescence from an In0.22Ga0.78Sb/GaSb single quantum well

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

article

Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

Thermal quenching of photoluminescence from InAs∕In0.53Ga0.23Al0.24As∕InP quantum dashes with different sizes

Thermal quenching of single localized excitons in GaInNAs layers

Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures

Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD—antimony surfactant effect

scholarly article by Michał Baranowski et al published 4 September 2012 in Semiconductor Science and Technology

Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy