An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

article

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs.

scientific article published on 31 July 2018

Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

Effects of alloy intermixing on the lateral confinement potential in InAs∕GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy

Growth and Characterization of 1.3μm Multi-Layer Quantum Dots Lasers Incorporating High Growth Temperature Spacer Layers

scientific article published in 2005

Growth and characterization of multiple layer quantum dot lasers

High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

scientific article published on 2 August 2004

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer

Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells

Influence of structure and defects on the performance of dot-in-well laser structures

Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

scientific article published on 15 August 2004

Optical properties of InxGa1−xAs/GaAs MQW structures on (111)B GaAs grown by MBE: dependence on substrate miscut

Proton radiation effect on InAs avalanche photodiodes

scientific article published on 01 February 2017

Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0–1.1μm operation

Relaxation study of InxGa1−xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications

Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates

The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy