List of works - Grzegorz Muziol

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

scholarly article by G. Muziol et al published 20 December 2017 in Optics Express

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Determination of gain in AlGaN cladding free nitride laser diodes

Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

scientific article published in March 2019

GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of the growth method on degradation of InGaN laser diodes

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Nitride-based laser diodes and superluminescent diodes

article

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Noise limitations of GaN lateral Schottky diodes for THz applications

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104, 023503 (2014)]

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

scientific article published on 11 January 2021

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

scientific article published on 01 March 2020

S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

article by Czeslaw Skierbiszewski et al published 19 October 2012 in Applied Physics Express

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

article by Czeslaw Skierbiszewski et al published 9 February 2018 in Applied Physics Express

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

“Aluminum free nitride laser diodes grown by plasma assisted MBE”

scholarly article published June 2016

List of works by Grzegorz Muziol