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Authors whose works are in public domain in at least one jurisdiction

List of works by Grzegorz Muziol

1-38 of 38 results

Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

Noise limitations of GaN lateral Schottky diodes for THz applications

“Aluminum free nitride laser diodes grown by plasma assisted MBE”

scholarly article published June 2016

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

scientific article published on 01 March 2020

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Influence of the growth method on degradation of InGaN laser diodes

Determination of gain in AlGaN cladding free nitride laser diodes

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection

Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

scholarly article by G. Muziol et al published 20 December 2017 in Optics Express

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

scientific article published on 11 January 2021

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104, 023503 (2014)]

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

article by Czeslaw Skierbiszewski et al published 9 February 2018 in Applied Physics Express

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

Nitride-based laser diodes and superluminescent diodes

article

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

scientific article published in March 2019

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

article by Czeslaw Skierbiszewski et al published 19 October 2012 in Applied Physics Express

Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N