List of works - Tetsuo Kodera

A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure

A fault-tolerant addressable spin qubit in a natural silicon quantum dot. ⬇️

scientific article published on 12 August 2016

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

scientific article published on 18 December 2017

Anomalous electron mobility in extremely-thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10 18 cm −3

article

Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor

article

Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices

Charge sensing and spin-related transport property of p-channel silicon quantum dots

Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing

article

Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots

Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

article

Fabrication and characterization of Si/SiGe quantum dots with capping gate

Fabrication and characterization of p-channel Si double quantum dots

Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

Germanium Nanowires with 3-nm-Diameter Prepared by Low Temperature Vapour–Liquid–Solid Chemical Vapour Deposition

scientific article published on 01 September 2011

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

scholarly article by Marolop Simanullang et al published 20 October 2011 in Japanese Journal of Applied Physics

Key capacitive parameters for designing single-electron transistor charge sensors

article

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

article published in 2015

Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature

scholarly article by Marolop Simanullang et al published December 2013 in Journal of Crystal Growth

Numerical simulation study of electrostatically defined silicon double quantum dot device

Optimization and Tunnel Junction Parameters Extraction of Electrostatically Defined Silicon Double Quantum Dots Structure

Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-Electrons

Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations Prepared by Very High Frequency Plasma

Preparing Multipartite Entangled Spin Qubits via Pauli Spin Blockade

scientific article published on 26 February 2020

Quantum information processing in a silicon-based system

Quantum non-demolition readout of an electron spin in silicon

scientific article published on 02 March 2020

Realization of Lithographically-Defined Silicon Quantum Dots without Unintentional Localized Potentials

Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching

Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon

Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

article

Surface passivation of germanium nanowires using Al2O3and HfO2deposited via atomic layer deposition technique

scholarly article by Marolop Simanullang et al published 12 May 2014 in Japanese Journal of Applied Physics

Surpassing the classical limit in magic square game with distant quantum dots coupled to optical cavities

scientific article published on 17 December 2020

List of works by Tetsuo Kodera

A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure

A fault-tolerant addressable spin qubit in a natural silicon quantum dot. ⬇️

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

Anomalous electron mobility in extremely-thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×10 18 cm −3

Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor

Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices

Charge sensing and spin-related transport property of p-channel silicon quantum dots

Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing

Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots

Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

Fabrication and characterization of Si/SiGe quantum dots with capping gate

Fabrication and characterization of p-channel Si double quantum dots

Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

Germanium Nanowires with 3-nm-Diameter Prepared by Low Temperature Vapour–Liquid–Solid Chemical Vapour Deposition

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

Key capacitive parameters for designing single-electron transistor charge sensors

Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate

Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature

Numerical simulation study of electrostatically defined silicon double quantum dot device

Optimization and Tunnel Junction Parameters Extraction of Electrostatically Defined Silicon Double Quantum Dots Structure

Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-Electrons

Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations Prepared by Very High Frequency Plasma

Preparing Multipartite Entangled Spin Qubits via Pauli Spin Blockade

Quantum information processing in a silicon-based system

Quantum non-demolition readout of an electron spin in silicon

Realization of Lithographically-Defined Silicon Quantum Dots without Unintentional Localized Potentials

Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching

Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon

Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

Surface passivation of germanium nanowires using Al2O3and HfO2deposited via atomic layer deposition technique

Surpassing the classical limit in magic square game with distant quantum dots coupled to optical cavities

Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

Synthesis of Ge/Si core/shell nanowires with suppression of branch formation

Terahertz radiation detection through a micro-scale antenna and a silicon-based quantum dot