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Authors whose works are in public domain in at least one jurisdiction

List of works by Mathieu Luisier

2-D Materials for Ultra-Scaled Field-Effect Transistors: Hundred Candidates under the Ab Initio Microscope

scientific article published on 12 June 2020

A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

article

A data-centric approach to extreme-scale <i>ab initio</i> dissipative quantum transport simulations

scientific article published on 07 November 2019

A generalized Poisson solver for first-principles device simulations.

scientific article published in January 2016

A multi-level parallel simulation approach to electron transport in nano-scale transistors

article

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

article

Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment

scholarly article published on 31 May 2018

Atomic Scale Photodetection Enabled by a Memristive Junction

scientific article published on 29 June 2018

Atomic Scale Plasmonic Switch

scientific article published on 15 December 2015

Atomic scale plasmonic devices

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

article

Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

article

Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations

scholarly article in Physical Review B, vol. 74 no. 20, November 2006

Atomistic simulation of transport phenomena in nanoelectronic devices

scientific article published on July 2014

Atomistic simulations for SiGe pMOS devices — Bandstructure to transport

Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights

scientific article published on 01 April 2020

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects

scientific article published on 23 March 2017

Band Effects on the Transport Characteristics of Ultrascaled SNW-FETs

Battery Performance: Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance (Adv. Sci. 6/2015).

scientific article

Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

Charge transport in semiconductors assembled from nanocrystal quantum dots

scientific article published on 05 June 2020

Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Computational nanoelectronics research and education at nanoHUB.org

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

article

Current density and continuity in discretized models

Current density and continuity in discretized models

Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance

scientific article published on 21 April 2015

Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

Effect of stacking faults and surface roughness on the thermal conductivity of InAs nanowires

scholarly article

Effects of interface roughness scattering on RF performance of nanowire transistors

article

Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

article

Efficient algorithms for large-scale quantum transport calculations.

scientific article published on August 2017

Electron Transport through Metal/MoS2 Interfaces: Edge- or Area-Dependent Process?

scientific article published on 14 May 2019

Electronic structure and transmission characteristics of SiGe nanowires

article

EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires

From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

scholarly article published December 2008

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

article published in 2008

Full-band and atomistic simulation of realistic 40 nm InAs HEMT

Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

Impact of Random Alloy Fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: An atomistic non-equilibrium Green's function study

scientific article published on 25 September 2020

Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications

article

Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons

article

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires

scientific article published on 22 December 2016

Light from van der Waals quantum tunneling devices

scientific article published in Nature Communications

Lithiation of tin oxide: a computational study ⬇️

scientific article

Microcanonical RT-TDDFT simulations of realistically extended devices

scientific article published on 01 September 2018

Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors

scientific article published on 6 January 2016

Modeling approaches for band-structure calculation in III-V FET quantum wells

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Multiband tight-binding model for strained and bilayer graphene from DFT calculations

Multiband transmission calculations for nanowires using an optimized renormalization method

article

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

scholarly article by Neerav Kharche et al published July 2011 in IEEE Transactions on Electron Devices

Numerical strategies towards peta-scale simulations of nanoelectronics devices

OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

One-Dimensional Edge Contacts to a Monolayer Semiconductor

scientific article published on 23 September 2019

Optimizing the data movement in quantum transport simulations via data-centric parallel programming

scientific article published on 07 November 2019

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

article

Performance analysis of ultra-scaled InAs HEMTs

Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

article

Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

article

Pushing back the limit of <i>ab-initio</i> quantum transport simulations on hybrid supercomputers

scientific article published on 27 October 2015

Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors

scientific article published on 21 December 2019

Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

scholarly article

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

article

Soft surfaces of nanomaterials enable strong phonon interactions

scientific article published on 9 March 2016

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

scholarly article in Physical Review B, vol. 81 no. 12, March 2010

Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications

Sub-10 nm carbon nanotube transistor

scientific article published on 18 January 2012

Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

Tuning Electron-Phonon Interactions in Nanocrystals through Surface Termination

scientific article published on 2 March 2018

Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and distribution

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

scholarly article

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