Search filters

List of works by Mehdi Salmani-Jelodar

Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

article

Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires

Design Guidelines for Sub-12 nm Nanowire MOSFETs

Enhanced valence force field model for the lattice properties of gallium arsenide

article

Model development for lattice properties of gallium arsenide using parallel genetic algorithm

article

Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs ⬇️

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Performance degradation due to thicker physical layer of high k oxide in ultra-scaled MOSFETs and mitigation through electrostatics design

Quantum corrected drift-diffusion simulation for prediction of CMOS scaling

Single layer MoS 2 band structure and transport

article published in 2011

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

scholarly article in Physical Review B, vol. 81 no. 12, March 2010

Tunneling: The major issue in ultra-scaled MOSFETs

Paulina is supported by:

About Paulina

Help