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List of works by Tania Paskova

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In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching

scientific article published on February 18, 2014
Comparison of the Stability of Functionalized GaN and GaP

scientific article published on March 24, 2015
GaN polarity determination by photoelectron diffraction

article published in 2013
Electron band bending of polar, semipolar and non-polar GaN surfaces

Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

scholarly article by Stewart J. Wilkins et al published February 2015 in Applied Surface Science
Surface Characterization of Gallium Nitride Modified with Peptides before and after Exposure to Ionizing Radiation in Solution

scientific article published on December 17, 2014
Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

scholarly article by E. M. Goldys et al published 14 December 1998 in Applied Physics Letters
Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

article published in 2014
Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

scholarly article by S. J. Wilkins et al published 14 August 2013 in Journal of Applied Physics
Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Structural defect-related emissions in nonpolar a-plane GaN

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

article by Bo Monemar et al published April 2006 in Physica B
Tuning the biocompatibility of aluminum nitride

scholarly article by Nora G. Berg et al published February 2017 in Materials Letters
Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

article published in 2017
Interfacial structure of a-plane GaN grown on r-plane sapphire

scientific article published on 19 February 2007
Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]

scientific article published on 11 June 2007
Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Influence of growth rate on the structure of thick GaN layers grown by HVPE

article published in 2000
Overgrowth of GaN on GaN nanowires produced by mask-less etching

article by P. Frajtag et al published August 2012 in Journal of Crystal Growth
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

article published in 2010
Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90, 6011 (2001)]

scholarly article published in Journal of Applied Physics
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

article
Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

scholarly article published in Journal of Applied Physics
Preface

Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid

article published in 2014
Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

Introduction

On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy

scientific article published in 2007
Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions

Charge transfer in semi-insulating Fe-doped GaN

Identification of the gallium vacancy–oxygen pair defect in GaN

scholarly article in Physical Review B, vol. 80 no. 15, October 2009
Atomic and electronic structure of N-terminated GaN(0001̄) (1 × 1) surface

Modulated optical sensitivity with nanostructured gallium nitride

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Radiation-induced defects in GaN

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

article
Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

scientific article published in June 2007
Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets

scholarly article by S A Ishmael et al published 19 August 2014 in Superconductor Science and Technology
GaN quantum dot polarity determination by X-ray photoelectron diffraction

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