List of works - Robert Czernecki

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

scientific article published on 9 June 2010

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Direct observation of long distance lateral transport in InGaN/GaN quantum wells

scientific article published on 7 February 2019

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Elimination of trench defects and V-pits from InGaN/GaN structures

scientific article published on 9 March 2015

Epitaxy on GaN bulk crystals

Graded-index separate confinement heterostructure InGaN laser diodes

scientific article published on 23 December 2013

Homogenous indium distribution in InGaN/GaN laser active structure grown by LP-MOCVD on bulk GaN crystal revealed by transmission electron microscopy and x-ray diffraction.

scientific article

Hydrogen diffusion in GaN:Mg and GaN:Si

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

scientific article published on 14 August 2019

Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

scientific article published on 16 October 2019

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

scientific article published in September 2014

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

Influence of the growth method on degradation of InGaN laser diodes

Monolithic cyan − violet InGaN/GaN LED array

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.

scientific article

Nitride-based laser diodes and superluminescent diodes

article

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

scientific article published on 21 June 2021

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

scientific article published in November 2004

Photoluminescence of InGaN/GaN quantum wells grown on c -plane substrates with locally variable miscut

Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

scientific article published on 2 February 2021

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

scientific article published on 15 June 2009

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN

scientific article published on 18 January 2016

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

scientific article published on 28 January 2021

XPS method as a useful tool for studies of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers