List of works - Felipe Murphy-Armando

Acoustic deformation potentials of n -type PbTe from first principles

scholarly article in Physical Review B, vol. 98 no. 8, August 2018

Alloy scattering of substitutional carbon in silicon: A first principles approach

Deformation Potentials and Electron−Phonon Coupling in Silicon Nanowires

scientific article published on 01 March 2010

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

scholarly article in Physical Review B, vol. 97 no. 19, May 2018

Erratum: First-principles calculation of carrier-phonon scattering inn-typeSi1−xGexalloys [Phys. Rev. B78, 035202 (2008)]

scholarly article published in Physical Review B

Erratum: “Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures” [J. Appl. Phys. 109, 113703 (2011)]

article

First principles calculation of electron-phonon and alloy scattering in strained SiGe

First-principles calculation of alloy scattering in Ge(x)Si(1-x).

scientific article published in September 2006

First-principles calculation of carrier-phonon scattering inn-typeSi1−xGexalloys

scholarly article in Physical Review B, vol. 78 no. 3, July 2008

First-principles calculation ofp-type alloy scattering inSi1−xGex

scholarly article in Physical Review B, vol. 75 no. 15, April 2007

First-principles investigation of the alloy scattering potential in dilute Si1−xCx

scholarly article in Physical Review B, vol. 85 no. 16, April 2012

Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

article

Giant mobility enhancement in highly strained, direct gap Ge

article

Giant piezoresistance in silicon-germanium alloys

scholarly article by Felipe Murphy-Armando & S. Fahy published 9 July 2012 in Physical Review B

Heterogeneously grown tunable group-IV laser on silicon

Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices

scientific article published on 12 November 2015

Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers

scientific article published on 25 April 2013

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

scholarly article by Maryam Shayesteh et al published December 2014 in IEEE Transactions on Electron Devices

Pushing the limits of silicon transistors

article

List of works by Felipe Murphy-Armando

Acoustic deformation potentials of n -type PbTe from first principles

Alloy scattering of substitutional carbon in silicon: A first principles approach

Deformation Potentials and Electron−Phonon Coupling in Silicon Nanowires

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Erratum: First-principles calculation of carrier-phonon scattering inn-typeSi1−xGexalloys [Phys. Rev. B78, 035202 (2008)]

Erratum: “Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures” [J. Appl. Phys. 109, 113703 (2011)]

First principles calculation of electron-phonon and alloy scattering in strained SiGe

First-principles calculation of alloy scattering in Ge(x)Si(1-x).

First-principles calculation of carrier-phonon scattering inn-typeSi1−xGexalloys

First-principles calculation ofp-type alloy scattering inSi1−xGex

First-principles investigation of the alloy scattering potential in dilute Si1−xCx

Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

Giant mobility enhancement in highly strained, direct gap Ge

Giant piezoresistance in silicon-germanium alloys

Heterogeneously grown tunable group-IV laser on silicon

Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices

Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers

Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

Pushing the limits of silicon transistors

Spin-Orbit Coupling and Electron Spin Resonance for Interacting Electrons in Carbon Nanotubes

Spin–orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes