List of works - Szymon Grzanka

450 nm (Al,In)GaN optical amplifier with double ‘j-shape’ waveguide for master oscillator power amplifier systems

scientific article published on 01 March 2018

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

scholarly article by G. Muziol et al published 20 December 2017 in Optics Express

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

scientific article published on 15 March 2013

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Direct observation of long distance lateral transport in InGaN/GaN quantum wells

scientific article published on 7 February 2019

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Graded-index separate confinement heterostructure InGaN laser diodes

scientific article published on 23 December 2013

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

scientific article published on 9 February 2006

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

scientific article published in 2006

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

Hydrogen diffusion in GaN:Mg and GaN:Si

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

scientific article published on 14 August 2019

Indium concentration fluctuations in InGaN/GaN quantum wells

scientific article published in 2019

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

scientific article published in September 2014

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Monolithic cyan − violet InGaN/GaN LED array

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

scientific article published in May 2016

Nitride-based laser diodes and superluminescent diodes

article

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104, 023503 (2014)]

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

scientific article published on 11 January 2021

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

scientific article published on 2 February 2021

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

scientific article published on 28 January 2021

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

Visible light communications using a directly modulated 422 nm GaN laser diode.

scientific article

List of works by Szymon Grzanka