Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors

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Analysis of HCS in STI-based LDMOS transistors

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Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

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Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs

Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

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Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

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TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

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Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

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Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis

High-frequency analog GNR-FET design criteria

article published in 2011

Steep-slope nanowire field-effect transistor (SS-NWFET)

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Quasi-ballistic transport in nanowire field-effect transistors

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Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Optimization and Analysis of the Dual n/p-LDMOS Device

A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles

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Graphene nanoribbons FETs for high-performance logic applications: Perspectives and challenges

DC and small-signal numerical simulation of graphene base transistor for terahertz operation

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Characterization and modeling of electrical stress degradation in STI-based integrated power devices

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

Simulations of Graphene Base Transistors With Improved Graphene Interface Model

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TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Effective Mobility in Nanowire FETs Under Quasi-Ballistic Conditions

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Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

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Ballistic ratio and backscattering coefficient in short-channel NW-FETs

Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

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Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs

Can Interface Traps Suppress TFET Ambipolarity?

Physical Model of the Junctionless UTB SOI-FET

Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions

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A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films

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Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions

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Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study

Physics-based analytical model of nanowire tunnel-FETs

Effects of High-$\kappa$ (HfO$_2$) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes

Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

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A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations

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Optimization of n- and p-type TFETs Integrated on the Same ${\rm InAs}/{\rm Al}_{x}{\rm Ga}_{1-x}{\rm Sb}$ Technology Platform

TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures

Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

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Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Theoretical foundations of the quantum drift-diffusion and density-gradient models

Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs

Theory of the Junctionless Nanowire FET

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

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