A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations

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A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles

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A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films

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A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

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A numerical approach to the solution of the Boltzmann transport equation for the analysis of hot-electron effects in semiconductors

An Investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions

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Analysis of HCS in STI-based LDMOS transistors

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Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

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Ballistic ratio and backscattering coefficient in short-channel NW-FETs

Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs

Can Interface Traps Suppress TFET Ambipolarity?

Characterization and Modeling of High-Voltage LDMOS Transistors

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Characterization and modeling of electrical stress degradation in STI-based integrated power devices

Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Computational Study of the Ultimate Scaling Limits of CNT Tunneling Devices

Contact-Induced Negative Differential Resistance in Short-Channel Graphene FETs

DC and small-signal numerical simulation of graphene base transistor for terahertz operation

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Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Effective Mobility in Nanowire FETs Under Quasi-Ballistic Conditions

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Effects of Channel Orientations, High-? Gate Stacks and Stress on UTB-FETs: A QDD Simulation Study

Effects of High-$\kappa$ (HfO$_2$) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes

Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis

Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains

Foreword

Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation

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Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics

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Graphene nanoribbons FETs for high-performance logic applications: Perspectives and challenges

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

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High-frequency analog GNR-FET design criteria

article published in 2011

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

L'affidabilità dei componenti elettronici a semiconduttore

book published by Scuola Superiore Guglielmo Reiss Romoli

Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs

Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs

Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations

article published in 2012

Optimization and Analysis of the Dual n/p-LDMOS Device

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

Optimization of n- and p-type TFETs Integrated on the Same ${\rm InAs}/{\rm Al}_{x}{\rm Ga}_{1-x}{\rm Sb}$ Technology Platform

Phonon-scattering effects in CNT- FETs with different dimensions and dielectric materials

Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Physical Model of the Junctionless UTB SOI-FET

Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions

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Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors

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Physics-based analytical model of nanowire tunnel-FETs

Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs

Quasi-Ballistic Transport in Nanowire Field-Effect Transistors

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Quasi-ballistic transport in nanowire field-effect transistors

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Rinaldo Castello and the Analog-Design Environment in Pavia: A Success Story

Role of encapsulation formulation on charge transport phenomena and HV device instability

Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

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Sensors small and numerous: always a winning strategy?

Session 31: Solid-state and nanoelectronic devices - silicon nanowire transistors

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Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

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Simulations of Graphene Base Transistors With Improved Graphene Interface Model

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Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

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Solid-State & Nanoelectronic Devices - SONOS and Charge Trapping Memory Devices

Steep-slope nanowire field-effect transistor (SS-NWFET)

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TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS Transistors

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TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures

TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power Applications

Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors

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Theoretical foundations of the quantum drift-diffusion and density-gradient models

Theory of the Junctionless Nanowire FET

Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs