List of works - Ewa Grzanka

Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures

Ammonothermal synthesis of GaN doped with transition metal ions (Mn, Fe, Cr)

scientific article published in May 2008

Analysis of short and long range atomic order in nanocrystalline diamonds with application of powder diffractometry

scientific article published in October 2002

Application of X-ray Powder Diffraction to Nano-materials - Determination of the Atomic Structure of Nanocrystals with Relaxed and Strained Surfaces

scientific article published in January 2003

Application of the apparent lattice parameter to determination of the core-shell structure of nanocrystals

scientific article published in November 2007

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

scientific article published on 15 March 2013

Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study

DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces

scientific article published in January 2021

Diffraction Studies of Nanocrystals: Theory and Experiment

scientific article published in July 2002

Effect of Pressure on Synthesis of Pr-Doped Zirconia Powders Produced by Microwave-Driven Hydrothermal Reaction

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Elaboration of SiC, TiC, and ZrC Nanopowders by Laser Pyrolysis: From Nanoparticles to Ceramic Nanomaterials

scientific article published in July 2005

Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality

scientific article published on 26 January 2015

Elimination of trench defects and V-pits from InGaN/GaN structures

scientific article published on 9 March 2015

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Examination of the atomic pair distribution function (PDF) of SiC nanocrystals by in-situ high pressure diffraction

scientific article published in November 2004

Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

scientific article published in November 2018

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

scientific article published in March 2019

Fabrication and Physical Properties of SiC-GaAs Nano-Composites

scientific article published on 15 July 2006

GaN‐Based Materials

scientific article published on 3 August 2020

Generation and Relaxation of Microstrains in GaN Nanocrystals under Extreme Pressures

scientific article published in August 2002

Graded-index separate confinement heterostructure InGaN laser diodes

scientific article published on 23 December 2013

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

HVPE-GaN growth on GaN-based advanced substrates by Smart Cut TM

scientific article published on 26 February 2016

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis

High pressure x-ray diffraction studies on nanocrystalline materials

scientific article published on 23 January 2004

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

scientific article published on 13 March 2015

Hydrogen diffusion in GaN:Mg and GaN:Si

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

scientific article published in September 2019

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

scientific article published on 14 August 2019

Indium concentration fluctuations in InGaN/GaN quantum wells

scientific article published in 2019

Influence of GaN substrate crystallographic quality on the intensity of AlGaN epitaxial layer X-ray diffraction peaks

scientific article published in July 2015

Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth

scientific article published on 16 October 2019

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

scientific article published in September 2014

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

Influence of the growth method on degradation of InGaN laser diodes

Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

scientific article published in May 2020

Investigation of relaxation of nanodiamond surface in real and reciprocal spaces

Looking beyond Limitations of Diffraction Methods of Structural Analysis of Nanocrystalline Materials

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis

scientific article published on 14 February 2022

Magnetic and optical properties of GaMnN magnetic semiconductor

scientific article published on 26 February 2001

Magnetic properties of ZnMnO nanopowders solvothermally grown at low temperature from zinc and manganese acetate

scientific article published on 11 December 2006

Mechanical properties of nanostructured 316LVM stainless steel annealed under pressure

scientific article published in December 2013

Method of preparation and structural properties of transparent YAG nanoceramics

Microstructure of nanocrystalline diamond powders studied by powder diffractometry

scientific article published on 15 March 2005

Microwave-Assisted Hydrothermal Synthesis of Zinc-Aluminum Spinel ZnAlO

scientific article published on 29 December 2021

Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study

scientific article published on 9 January 2022

Monolithic cyan − violet InGaN/GaN LED array

Morphology and luminescence properties of zinc oxide nanopowders doped with aluminum ions obtained by hydrothermal and vapor condensation methods

scientific article published in October 2007

Nanocrystals: Breaking limitations of data analysis

scientific article published in December 2010

Neutron diffraction studies of the atomic thermal vibrations in complex materials: application of the Wilson method to examination of micro- and nano-crystalline SiC

Nitride-based laser diodes and superluminescent diodes

article

Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth

scientific article published on 21 June 2021

Origin of macrostrains and microstrains in diamond-SiC nanocomposites based on the core-shell model

scientific article published in October 2007

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Possible origin of ferromagnetism in (Ga,Mn)N

scientific article published on 15 April 2003

Probing the Structural/Electronic Diversity and Thermal Stability of Various Nanocrystalline Powders of Gallium Nitride GaN

scientific article published on 16 October 2008

Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

scientific article published on 11 January 2021

Raman Spectroscopy of LiFePO 4 and Li 3 V 2 (PO 4 ) 3 Prepared as Cathode Materials

scientific article published in November 2011

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

scientific article published on 2 February 2021

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

SiC – Zn Nanocomposites Obtained Using the High – Pressure Infiltration Technique

scientific article published in July 2006

Solvothermal synthesis of nanocrystalline zinc oxide doped with Mn2+, Ni2+, Co2+ and Cr3+ ions

scientific article published on 27 November 2008

Stacking faults in plastically relaxed InGaN epilayers

scientific article published on 11 February 2020

Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations

scientific article published in February 2021

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN

scientific article published on 18 January 2016

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

Synthesis of Metal-Ceramic Nanocomposites by High-Pressure Infiltration

scientific article published on 15 January 2005

Tb3+ ions in presence of ZnS:Mn2+ nanocrystals immobilized on silica: Energy transfer ZnS→Tb3+ and coordination state of Mn2+ ions

scientific article published in March 2009

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

scientific article published on 28 January 2021

Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures

scientific article published on 21 August 2020

Tuning aerosol-assisted vapor phase processing towards low oxygen GaN powders

scientific article published in May 2006

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

X-ray diffraction studies of thermal properties of the core and surface shell of isolated and sintered SiC nanocrystals