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List of works by Christophe Gaquière

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

article

Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105, 093505 (2014)]

scientific article published on 11 May 2015

GaN devices for power amplifier design

Improvements of High Performance 2-nm-thin InAlN∕AlN Barrier Devices by Interface Engineering

MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances

MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performances

Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties

scientific article published in March 2015

On the effect of δ-doping in self-switching diodes

scientific article published in September 2014

Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs

Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

Temperature measurements in RF operating conditions of AlGaN/GaN HEMTs using IR microscopy and Raman spectroscopy

Terahertz detection in zero-bias InAs self-switching diodes at room temperature

scientific article published on 23 September 2013

Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

scientific article published on 16 June 2020

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

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