A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.

scientific article

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers. ⬇️

scientific article published on 27 March 2018

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

article published in 2009

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors ⬇️

article

Diffuse x-ray scattering from thin films with defects

scientific article published on 01 May 1995

Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si ⬇️

Dual surface plasmon resonances in Zn nanoparticles in SiO(2): an experimental study based on optical absorption and thermal stability

scientific article published on 07 September 2007

Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

scientific article published on 26 January 2018

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

article

Electronic structure of buried alpha -FeSi2 and beta -FeSi2 layers: Soft-x-ray-emission and -absorption studies compared to band-structure calculations

scientific article published on 01 December 1994

Electronic-structure determination of ion-beam-synthesized CoSi2 using photon-in-photon-out spectroscopies

scientific article published on 01 August 1993

Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at.% ⬇️

Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility

article

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

scientific article

From Thin Relaxed SiGe Buffer Layers to Strained Silicon Directly on Oxide

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers ⬇️

Hexagonal LaLuO3as high-κdielectric

High frequency n-type MODFETs on ultra-thin virtual SiGe substrates

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

article

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

article

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

Low V(π) Silicon photonics modulators with highly linear epitaxially grown phase shifters.

scientific article published in September 2015

Microstrip structures of ZnO nanoparticle aggregates of millimetric length formed by selected-area ion implantation and thermal oxidation

scientific article published on 14 January 2009

Microstructure evolution effects of helium redistribution in as-implanted silicon and Si0.8Ge0.2/Si heterostructues

New method for epitaxial heterostructure layer growth

Nucleation and Movement of Dislocations during Relaxation of He Implanted Si

Optically Pumped GeSn Microdisk Lasers on Si ⬇️

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface.

scientific article

Reduction of dislocation density of MBE-grown Si1−xGex layers on (100) Si by rapid thermal annealing

scientific article published in December 1989

Reduction of silicon dioxide interfacial layer to 4.6Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si

Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells ⬇️

Si/SiGe n-MODFETs on thin SiGe virtual substrates prepared by means of He implantation

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters ⬇️

scientific article published on 3 February 2017

SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications ⬇️

Strain Relaxation of He+ Implanted, Pseudomorphic Si1−xGex Layers on Si(100)

Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

scientific article published in January 2000

Tensely strained GeSn alloys as optical gain media ⬇️

Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes

X-ray reflectivity and diffuse-scattering study of CoSi2 layers in Si produced by ion-beam synthesis

scientific article published on 01 February 1993