List of works - Timothy Boykin

A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

article

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

article

Allowed wavevectors under the application of incommensurate periodic boundary conditions

article

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

article

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Brillouin zone unfolding method for effective phonon spectra ⬇️

scholarly article in Physical Review B, vol. 90 no. 20, November 2014

Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization

scholarly article in Physical Review B, vol. 76 no. 3, July 2007

Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

article

Conduction-band tight-binding description for Si applied to P donors

scholarly article in Physical Review B, vol. 72 no. 19, November 2005

Current density and continuity in discretized models

Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

article by Samarth Agarwal et al published 2010 in Electrochemical and Solid-State Letters

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

article

Electron transport in nano-scaled piezoelectronic devices

scholarly article by Zhengping Jiang et al published 13 May 2013 in Applied Physics Letters

Electronic structure and transmission characteristics of SiGe nanowires

article

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Evolution time and energy uncertainty

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

Insights from simple models for surface states in nanostructures

Multiband transmission calculations for nanowires using an optimized renormalization method

article

Multimillion Atom Simulations with Nemo3D

Non-primitive rectangular cells for tight-binding electronic structure calculations

Practical application of zone-folding concepts in tight-binding calculations

scholarly article in Physical Review B, vol. 71 no. 11, March 2005

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

article published in 2011

Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model

article

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

scholarly article in Physical Review B, vol. 81 no. 12, March 2010

The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

The discretized Schrödinger equation and simple models for semiconductor quantum wells

article by Timothy Boykin et al published 5 May 2004 in European Journal of Physics

The discretized Schrödinger equation for the finite square well and its relationship to solid-state physics

article published in 2005

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution ⬇️

article

Transferable tight-binding model for strained group IV and III-V materials and heterostructures ⬇️

article

Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

Valley degeneracies in (111) silicon quantum wells

Valley splitting in V-shaped quantum wells

article published in 2005

Valley splitting in finite barrier quantum wells

scholarly article in Physical Review B, vol. 77 no. 24, June 2008

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

article

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

article

List of works by Timothy Boykin

A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

Allowed wavevectors under the application of incommensurate periodic boundary conditions

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Brillouin zone unfolding method for effective phonon spectra ⬇️

Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization

Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Conduction-band tight-binding description for Si applied to P donors

Current density and continuity in discretized models

Current density and continuity in discretized models

Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

Electron transport in nano-scaled piezoelectronic devices

Electronic structure and transmission characteristics of SiGe nanowires

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

Evolution time and energy uncertainty

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

Insights from simple models for surface states in nanostructures

Multiband transmission calculations for nanowires using an optimized renormalization method

Multimillion Atom Simulations with Nemo3D

Non-primitive rectangular cells for tight-binding electronic structure calculations

Practical application of zone-folding concepts in tight-binding calculations

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

The discretized Schrödinger equation and simple models for semiconductor quantum wells

The discretized Schrödinger equation for the finite square well and its relationship to solid-state physics

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution ⬇️

Transferable tight-binding model for strained group IV and III-V materials and heterostructures ⬇️

Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

Valley degeneracies in (111) silicon quantum wells

Valley splitting in V-shaped quantum wells

Valley splitting in finite barrier quantum wells

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder