List of works - Giordano Scappucci

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

scientific article

A single-hole spin qubit

scientific article published on 10 July 2020

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

scientific article

Atomic-scale silicon device fabrication

Author Correction: Rapid gate-based spin read-out in silicon using an on-chip resonator

scientific article published on 01 December 2019

Ballistic superconductivity and tunable π-junctions in InSb quantum wells

scientific article published on 21 August 2019

Bottom-up assembly of metallic germanium.

scientific article published on 10 August 2015

Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

scientific article published on 4 May 2017

Electrical Characterization of Ordered Si:P Dopant Arrays

Electronic structure of phosphorus and arsenicδ-doped germanium

scholarly article by D. J. Carter et al published 6 September 2013 in Physical Review B

Exploring the limits of N-type ultra-shallow junction formation.

scientific article

Gate-controlled quantum dots and superconductivity in planar germanium

scientific article published in Nature Communications

Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

scientific article published on 22 January 2019

Lithography and doping in strained Si towards atomically precise device fabrication.

scientific article

Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device

scientific article published in 2023

New avenues to an old material: controlled nanoscale doping of germanium.

scientific article

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

scientific article published on 22 August 2011

Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.

scientific article

Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices

scientific article published on 03 March 2011

Rapid gate-based spin read-out in silicon using an on-chip resonator

scientific article published on 08 July 2019

Realization of Atomically Controlled Dopant Devices in Silicon

scientific article published on 01 April 2007

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium. ⬇️

scientific article published on 13 June 2014

Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport

scientific article

Strong spin-photon coupling in silicon

scientific article

n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level

scientific article published in Physical Review Letters

List of works by Giordano Scappucci

A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium.

A single-hole spin qubit

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

Atomic-scale silicon device fabrication

Author Correction: Rapid gate-based spin read-out in silicon using an on-chip resonator

Ballistic superconductivity and tunable π-junctions in InSb quantum wells

Bottom-up assembly of metallic germanium.

Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

Electrical Characterization of Ordered Si:P Dopant Arrays

Electronic structure of phosphorus and arsenicδ-doped germanium

Exploring the limits of N-type ultra-shallow junction formation.

Gate-controlled quantum dots and superconductivity in planar germanium

Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

Lithography and doping in strained Si towards atomically precise device fabrication.

Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device

New avenues to an old material: controlled nanoscale doping of germanium.

Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers

Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.

Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices

Rapid gate-based spin read-out in silicon using an on-chip resonator

Realization of Atomically Controlled Dopant Devices in Silicon

Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium. ⬇️

Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport

Strong spin-photon coupling in silicon

n-Type Doping of Germanium from Phosphine: Early Stages Resolved at the Atomic Level