List of works - Björn Magnusson

Analysis of the sharp donor-acceptor pair luminescence in4H-SiC doped with nitrogen and aluminum

scholarly article by Ivan G. Ivanov et al published 30 April 2003 in Physical Review B

Clustering of vacancy defects in high-purity semi-insulating SiC

scholarly article in Physical Review B, vol. 75 no. 8, February 2007

Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC

Defects and carrier compensation in semi-insulating4H−SiCsubstrates

scholarly article in Physical Review B, vol. 75 no. 15, April 2007

Defects in SiC

EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC

scholarly article in Physical Review B, vol. 82 no. 23, December 2010

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electronic structure of the neutral silicon vacancy in4Hand6HSiC

scholarly article in Physical Review B, vol. 62 no. 24, December 2000

Identification of divacancies in 4H-SiC

Intrinsic defects in high-purity SiC

Material characterization need for SiC-based devices

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Optical selection rules for shallow donors in4H−SiCand ionization energy of the nitrogen donor at the hexagonal site

article by Ivan G. Ivanov et al published 30 April 2003 in Physical Review B

Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC

Photoluminescence upconversion in 4H–SiC

Prominent defects in semi-insulating SiC substrates

The Carbon Vacancy Related EI4 Defect in 4H-SiC

The EI4 EPR centre in 6H SiC

The Silicon Vacancy in SiC

The silicon vacancy in SiC

UD-3 defect in4H,6H,and15RSiC: Electronic structure and phonon coupling

scholarly article in Physical Review B, vol. 66 no. 11, September 2002

Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC

article published in 1999

List of works by Björn Magnusson