List of works - Nguyen Tien Son

Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC

scholarly article in Physical Review B, vol. 63 no. 24, May 2001

Ab initiosupercell calculations on aluminum-related defects in SiC

scholarly article by Adam Gali et al published 31 January 2007 in Physical Review B

Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study

scholarly article by Adam Gali et al published 7 March 2005 in Applied Physics Letters

Aggregation of carbon interstitials in silicon carbide: A theoretical study

scientific article published on 8 September 2003

Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC

Anti-site pair in SiC: a model of the DI center

Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study

scientific article published in Physical Review Letters

Bright single photon sources in lateral silicon carbide light emitting diodes

scholarly article by Matthias Widmann et al published 4 June 2018 in Applied Physics Letters

Capacitance transient studies of electron irradiated 4H-SiC

Capture cross sections of electron irradiation induced defects in 6H–SiC

Carbon vacancy-related defect in 4Hand 6HSiC

scholarly article in Physical Review B, vol. 63 no. 20, April 2001

Carbon-vacancy related defects in 4H- and 6H-SiC

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory ⬇️

scholarly article by A. Szállás et al published 21 September 2014 in Journal of Applied Physics

Clustering of vacancy defects in high-purity semi-insulating SiC

scholarly article in Physical Review B, vol. 75 no. 8, February 2007

Coherent control of single spins in silicon carbide at room temperature

scientific article (publication date: December 2014)

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

scientific article published on 05 December 2019

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Configuration transformation of metastable defects in 6H-SiC

Conjugated Polyelectrolyte Blends for Electrochromic and Electrochemical Transistor Devices

article

Correlation between the antisite pair and theDIcenter in SiC

scholarly article in Physical Review B, vol. 67 no. 15, April 2003

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Deep levels in low-energy electron-irradiated 4H-SiC

Deep luminescent centres in electron-irradiated 6H SiC

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Defects and carrier compensation in semi-insulating4H−SiCsubstrates

scholarly article in Physical Review B, vol. 75 no. 15, April 2007

Defects at nitrogen site in electron-irradiated AlN

Determination of the electron effective-mass tensor in 4HSiC

scientific article published on 01 June 1996

Diffusion of hydrogen in perfect,p-type doped, and radiation-damaged4H−SiC

scholarly article in Physical Review B, vol. 69 no. 23, June 2004

Divacancy in 4H-SiC

scientific article published in Physical Review Letters

Dominant recombination center in electron‐irradiated 3CSiC

EPR Identification of Defects and Impurities in SiC: To be Decisive

EPR Identification of Intrinsic Defects in SiC

EPR and ENDOR Studies of Shallow Donors in SiC

article by Nguyen Tien Son et al published 26 May 2010 in Applied Magnetic Resonance

EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC

scholarly article in Physical Review B, vol. 71 no. 19, May 2005

EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC

scholarly article in Physical Review B, vol. 82 no. 23, December 2010

EPR identification of intrinsic defects in SiC

Effective Masses in SiC Determined by Cyclotron Resonance Experiments

Effects of microwave fields on recombination processes in 4H and 6H SiC

Electrical and optical control of single spins integrated in scalable semiconductor devices

scientific article published on 01 December 2019

Electrical characterization of metastable carbon clusters inSiC: A theoretical study

scholarly article in Physical Review B, vol. 73 no. 3, January 2006

Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor

scholarly article by J. Zhang et al published 15 April 2003 in Journal of Applied Physics

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC

article published in 2013

Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers

article

Electron effective masses in 4H SiC

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in3C-,4H-, and6H−SiC

article by Nguyen Tien Son et al published 1 February 2006 in Physical Review B

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Electron-paramagnetic-resonance identification of silver centers in silicon

scientific article published on 01 August 1992

Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC

article published in 1999

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

scholarly article by Frank Mehnke et al published 14 October 2016 in Journal of Applied Physics

Electronic properties of defects in high-fluence electron-irradiated bulk GaN

Electronic structure of a photoluminescent center in silver-doped silicon

scientific article published on 01 June 1994

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

Hole effective masses in 6H-SiC from optically detected cyclotron resonance

scholarly article in Physical Review B, vol. 66 no. 4, July 2002

Hydrogen at zinc vacancy of ZnO: An EPR and ESEEM study

Hydrogen passivation of nitrogen in SiC

article published in 2003

Hyperfine interaction of the nitrogen donor in4H−SiC

scholarly article in Physical Review B, vol. 70 no. 19, November 2004

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

scholarly article published May 2012

Identification of a Frenkel-pair defect in electron-irradiated 3CSiC

scholarly article in Physical Review B, vol. 80 no. 12, September 2009

Identification of divacancies in 4H-SiC

Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

scientific article published in Physical Review Letters

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

Identification of the gallium vacancy–oxygen pair defect in GaN

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide

scholarly article by B. Aradi et al published 22 October 2001 in Applied Physics Letters

Intrinsic defects in high-purity SiC

Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

article published in 2013

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Isolated electron spins in silicon carbide with millisecond coherence times

scientific article

Ligand ENDOR on substitutional manganese in GaAs

scientific article published on 01 April 1994

Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and6H−SiC

scholarly article in Physical Review B, vol. 66 no. 15, October 2002

Magnetic characterization of conductance electrons in GaN

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

scientific article published on 25 July 2013

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Metastable defects in 6H–SiC: experiments and modeling

Negative-U behavior of the Si donor in Al0.77Ga0.23N

Negative-USystem of Carbon Vacancy in4H-SiC

scientific article published in Physical Review Letters

Negative-Ucarbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

scholarly article in Physical Review B, vol. 88 no. 23, December 2013

Observation of negative-U centers in 6H silicon carbide

scholarly article by C. G. Hemmingsson et al published 8 February 1999 in Applied Physics Letters

On the behavior of silicon donor in conductive AlxGa1-xN (0.63 ≤x≤ 1)

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

scholarly article published January 2013

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Optically detected cyclotron resonance investigations on4Hand6HSiC: Band-structure and transport properties

scholarly article in Physical Review B, vol. 61 no. 7, February 2000

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers

Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers

scholarly article in Physical Review B, vol. 55 no. 5, February 1997

Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC

Overcoordinated hydrogens in the carbon vacancy: donor centers of SiC

scientific article published on 01 May 2000

Paramagnetic state of the isolated gold impurity in silicon

scientific article published on 01 November 1992

Passivation of p-type dopants in 4H-SiC by hydrogen

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC

Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC

Possibility for the electrical activation of the carbon antisite by hydrogen inSiC

scholarly article in Physical Review B, vol. 71 no. 3, January 2005

Possible lifetime‐limiting defect in 6H SiC

article by Nguyen Tien Son et al published 21 November 1994 in Applied Physics Letters

Prominent defects in semi-insulating SiC substrates

Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)]

scientific article published in Physical Review Letters

Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC

article by J. Isoya et al published April 2006 in Physica B

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

scientific article published on 23 March 2018

Radiation-induced defects in GaN

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Recombination centers in as-grown and electron-irradiated ZnO substrates

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

scientific article

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

scholarly article published 2017

Shallow P Donors in 3C-, 4H- and 6H-SiC

scholarly article published October 2006

Shallow donor and DX states of Si in AlN

article by Nguyen Tien Son et al published 28 February 2011 in Applied Physics Letters

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

Silicon Antisite in4HSiC

scientific article published on 05 July 2001

Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study

Silicon in AlN: shallow donor and DX behaviors

article by Nguyen Tien Son et al published 19 May 2011 in Physica Status Solidi C: Current Topics in Solid State Physics

Silicon vacancy related defect in 4H and 6H SiC

scholarly article in Physical Review B, vol. 61 no. 4, January 2000

Silicon vacancy relatedTV2acenter in 4H-SiC

scholarly article in Physical Review B, vol. 68 no. 20, November 2003

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

scientific article published on 20 May 2020

Stabilization of point-defect spin qubits by quantum wells

scientific article published on 06 December 2019

Stable and metastable Si negative-U centers in AlGaN and AlN

Stark tuning and electrical charge state control of single divacancies in silicon carbide

scholarly article by Charles F. de las Casas et al published 25 December 2017 in Applied Physics Letters

The Carbon Vacancy Related EI4 Defect in 4H-SiC

The EI4 EPR centre in 6H SiC

The Silicon Vacancy in SiC

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

The silicon vacancy in SiC

Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC

Theoretical study of small silicon clusters in4H−SiC

scholarly article in Physical Review B, vol. 76 no. 16, October 2007

List of works by Nguyen Tien Son

Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC

Ab initiosupercell calculations on aluminum-related defects in SiC

Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study

Aggregation of carbon interstitials in silicon carbide: A theoretical study

Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC

Anti-site pair in SiC: a model of the DI center

Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study

Bright single photon sources in lateral silicon carbide light emitting diodes

Capacitance transient studies of electron irradiated 4H-SiC

Capture cross sections of electron irradiation induced defects in 6H–SiC

Carbon vacancy-related defect in 4Hand 6HSiC

Carbon-vacancy related defects in 4H- and 6H-SiC

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory ⬇️

Clustering of vacancy defects in high-purity semi-insulating SiC

Coherent control of single spins in silicon carbide at room temperature

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Configuration transformation of metastable defects in 6H-SiC

Conjugated Polyelectrolyte Blends for Electrochromic and Electrochemical Transistor Devices

Correlation between the antisite pair and theDIcenter in SiC

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Deep levels in low-energy electron-irradiated 4H-SiC

Deep luminescent centres in electron-irradiated 6H SiC

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Defects and carrier compensation in semi-insulating4H−SiCsubstrates

Defects at nitrogen site in electron-irradiated AlN

Determination of the electron effective-mass tensor in 4HSiC

Diffusion of hydrogen in perfect,p-type doped, and radiation-damaged4H−SiC

Divacancy in 4H-SiC

Dominant recombination center in electron‐irradiated 3CSiC

EPR Identification of Defects and Impurities in SiC: To be Decisive

EPR Identification of Intrinsic Defects in SiC

EPR and ENDOR Studies of Shallow Donors in SiC

EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC

EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC

EPR identification of intrinsic defects in SiC

Effective Masses in SiC Determined by Cyclotron Resonance Experiments

Effects of microwave fields on recombination processes in 4H and 6H SiC

Electrical and optical control of single spins integrated in scalable semiconductor devices

Electrical characterization of metastable carbon clusters inSiC: A theoretical study

Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC

Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers

Electron effective masses in 4H SiC

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in3C-,4H-, and6H−SiC

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Electron-paramagnetic-resonance identification of silver centers in silicon

Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

Electronic properties of defects in high-fluence electron-irradiated bulk GaN

Electronic structure of a photoluminescent center in silver-doped silicon

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

Hole effective masses in 6H-SiC from optically detected cyclotron resonance

Hydrogen at zinc vacancy of ZnO: An EPR and ESEEM study

Hydrogen passivation of nitrogen in SiC

Hyperfine interaction of the nitrogen donor in4H−SiC

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

Identification of a Frenkel-pair defect in electron-irradiated 3CSiC

Identification of divacancies in 4H-SiC

Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

Identification of the gallium vacancy–oxygen pair defect in GaN

Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide

Intrinsic defects in high-purity SiC

Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Isolated electron spins in silicon carbide with millisecond coherence times

Ligand ENDOR on substitutional manganese in GaAs

Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and6H−SiC

Magnetic characterization of conductance electrons in GaN

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Metastable defects in 6H–SiC: experiments and modeling

Negative-U behavior of the Si donor in Al0.77Ga0.23N