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List of works by Kazutoshi Kojima

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

scholarly article published 2013

Charge Collection Efficiency of 6H-SiC P + N Diodes Degraded by Low-Energy Electron Irradiation

Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike

Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures

article published in 2000

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

scholarly article published 29 May 2013

Investigation of Factors Influencing the Occurrence of 3C-Inclusions for the Thick Growth of on-Axis C-Face 4H-SiC Epitaxial Layers

scientific article published on 28 October 2020

Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

scientific article published on 01 December 2020

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors

Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC ${\hbox{p}}^{+}{\hbox{n}}$ Diode Irradiated With High-Energy Electrons

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

scientific article published on 17 October 2014

Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence

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