List of works - Julita Smalc-Koziorowska

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

scientific article published in May 2010

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

scientific article published on 21 October 2015

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Elimination of trench defects and V-pits from InGaN/GaN structures

scientific article published on 9 March 2015

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

scientific article published in March 2019

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

scientific article published on 9 February 2006

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

scientific article published in 2006

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

scientific article published in September 2014

Mechanism of Reduced Sintering Temperature of Al₂O₃⁻ZrO₂ Nanocomposites Obtained by Microwave Hydrothermal Synthesis.

scientific article

Novel Photocatalytic Nanocomposite Made of Polymeric Carbon Nitride and Metal Oxide Nanoparticles

scientific article published on 01 March 2019

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Revisiting the conformational state of albumin conjugated to gold nanoclusters: A self-assembly pathway to giant superstructures unraveled

scientific article published on 27 June 2019

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

scientific article published on 2 February 2021

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Stacking faults in plastically relaxed InGaN epilayers

scientific article published on 11 February 2020

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN

scientific article published on 18 January 2016

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

scientific article published on 28 January 2021

Towards Organized Hybrid Nanomaterials at the Air/Water Interface Based on Liquid-Crystal/ZnO Nanocrystals

scientific article published on 2 October 2015

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

List of works by Julita Smalc-Koziorowska