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List of works by Marta Sawicka

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

scientific article published in May 2010

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Determination of gain in AlGaN cladding free nitride laser diodes

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

scientific article published in September 2019

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104, 023503 (2014)]

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

scientific article published on 01 March 2020

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Stack of two III-nitride laser diodes interconnected by a tunnel junction

scientific article published on 01 February 2019

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates