List of works - Henryk Turski

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

scholarly article by G. Muziol et al published 20 December 2017 in Optics Express

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

Determination of gain in AlGaN cladding free nitride laser diodes

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

scientific article published on 01 November 2020

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

scientific article published on 01 February 2020

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

scientific article published in March 2019

Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Hydrogen diffusion in GaN:Mg and GaN:Si

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

scientific article published on 29 December 2020

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Magnetic Liquid Crystals for Molecular Spintronics

scientific article published in November 2008

Nitride light-emitting diodes for cryogenic temperatures

scientific article published on 01 September 2020

Nitride-based laser diodes and superluminescent diodes

article

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defects

scientific article published in November 2021

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Publisher’s Note: “Cyan laser diode grown by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 104, 023503 (2014)]

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

scientific article published on 11 January 2021

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

scientific article published on 01 March 2020

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

scientific article published on 2 February 2021

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Stack of two III-nitride laser diodes interconnected by a tunnel junction

scientific article published on 01 February 2019

Stacking faults in plastically relaxed InGaN epilayers

scientific article published on 11 February 2020

Step-flow growth mode instability of N-polar GaN under N-excess

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

article by Czeslaw Skierbiszewski et al published 19 October 2012 in Applied Physics Express

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

article by Czeslaw Skierbiszewski et al published 9 February 2018 in Applied Physics Express

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

“Aluminum free nitride laser diodes grown by plasma assisted MBE”

scholarly article published June 2016

List of works by Henryk Turski