160°C pulsed laser operation of AlGaInP-based vertical-cavity surface-emitting lasers

2.5 W continuous wave output at 665 nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser

scientific article

5 GHz modulation of 650 nm VCSEL

Active and Passive LC Based Polarization Elements

AlGaInP-based Vertical-Cavity Surface-Emitting Lasers for Sensoring and Polarization Switching

All quantum dot mode-locked semiconductor disk laser emitting at 655 nm

Analog Modulation of 650-nm VCSELs

Analysis of the modulation behavior of red VCSELs

Approaches for III∕V Photonics on Si

Band-gap measurements of direct and indirect semiconductors using monochromated electrons

scholarly article in Physical Review B, vol. 75 no. 19, May 2007

Carrier dynamics in site-controlled Ga1–xInxN quantum dots

article

Cascaded single-photon emission from the Mollow triplet sidebands of a quantum dot

article published in 2012

Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE

Combining in-situ lithography with 3D printed solid immersion lenses for single quantum dot spectroscopy

scientific article

Comparison of AlGaInP-VECSEL gain structures

Comparison of the material properties of GaInN structures grown with ammonia and dimethyl-hydrazine as nitrogen precursors

DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm

DC and pulsed electrical excitation of single quantum dots

Defect reduced selectively grown GaN pyramids as template for green InGaN quantum wells

Degradation studies and pump optimization of optically pumped red-emitting AlGaInP-VECSELs

Deterministic integration and optical characterization of telecom O-band quantum dots embedded into wet-chemically etched Gaussian-shaped microlenses

article published in 2018

Detuning-dependent Mollow triplet of a coherently-driven single quantum dot.

scientific article

Differential phase contrast 2.0—Opening new “fields” for an established technique

scientific article published on 17 April 2012

Direct imaging of GaN Pyramids covered by InGaN Single Quantum Well using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence

Efficiency and power scaling of in-well and multi-pass pumped AlGaInP VECSELs

Electric-Field Tuning of Spin-Dependent Exciton-Exciton Interactions in Coupled Quantum Wells

scientific article published in Physical Review Letters

Electrically driven quantum dot single-photon source at 2 GHz excitation repetition rate with ultra-low emission time jitter

Electrically pumped single-photon emission up to 80 K—Towards a commercial single-photon emitting device

Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots

scholarly article in Physical Review B, vol. 86 no. 12, September 2012

Electronic shell structure and carrier dynamics of high aspect ratioInPsingle quantum dots

scholarly article in Physical Review B, vol. 75 no. 19, May 2007

Enhanced efficiency of AlGaInP disk laser by in-well pumping

scientific article published on February 2015

Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)

Evidence of different confinement regimes in site-controlled pyramidal InGaN structures

article

Excited-state spectroscopy of single lateral self-assembled InGaAs quantum dot molecules

scholarly article in Physical Review B, vol. 85 no. 11, March 2012

Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots.

scientific article published on 21 May 2015

Femtosecond mode-locked red AlGaInP-VECSEL

Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV

Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs

Generation of UV laser light via intra-cavity frequency doubling of an AlGaInP-VECSEL

Generation, guiding and splitting of triggered single photons from a resonantly excited quantum dot in a photonic circuit.

scientific article

Green photoluminescence of single InP-quantum dots grown on InP/AlInP distributed Bragg reflectors

Growth and characterization of electrically pumped red-emitting VCSEL with embedded InP/AlGaInP quantumdots

Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE

Growth of self-assembled AlInGaN quantum dots by MOVPE

High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets

High-frequency Triggered Single—Photon Emission From Electrically Driven InP∕(Al,Ga)InP Quantum Dots

High-frequency electrically driven quantum dot single-photon source

High-power InP quantum dot based semiconductor disk laser exceeding 1.3 W

Improved gain chip holder design for high efficient, high power AlGaInP-VECSEL

InP quantum dot based semiconductor disk laser emitting at 655 nm

InP quantum dots for applications in laser devices and future solid-state quantum gates

InP quantum dots in pillar microcavities – mode spectra and single-photon emission

InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations

InP/AlGaInP quantum dot laser emitting at 638nm

Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectors

Influence of the Exciton Dark State on the Optical and Quantum Optical Properties of Single Quantum Dots

Influence of the dark exciton state on the optical and quantum optical properties of single quantum dots.

scientific article published in October 2008

Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots

article published in 2013

Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

scientific article published on July 2015

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes

Lasing properties of InP/(Ga0.51In0.49)P quantum dots in microdisk cavities

scholarly article in Physical Review B, vol. 83 no. 20, May 2011

Low Threshold InP/AlGaInP Quantum Dot In-Plane Laser Emitting at 638 nm

Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths.

scientific article

Low threshold and room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots

Low threshold electrically pumped red emitting InP/Al 0.20 GaInP quantum dot vertical microcavity laser

Low-density InP quantum dots embedded in Ga0.51In0.49P with high optical quality realized by a strain inducing layer

Low-noise quantum frequency down-conversion of indistinguishable photons.

scientific article published in September 2016

MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions

Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

article published in 2015

Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers

scientific article published on 4 February 2016

Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses

Mollow quintuplets from coherently excited quantum dots

scientific article published in May 2013

Monolithic on-chip integration of semiconductor waveguides, beamsplitters and single-photon sources ⬇️

Near-red emission from site-controlled pyramidal InGaN quantum dots

Neutral and charged biexciton-exciton cascade in near-telecom-wavelength quantum dots

scholarly article in Physical Review B, vol. 94 no. 4, July 2016

Non-resonant tunneling in single pairs of vertically stacked asymmetric InP/GaInP quantum dots

Nonresonant tunneling in single asymmetric pairs of vertically stackedInPquantum dots

scholarly article in Physical Review B, vol. 76 no. 8, August 2007

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

Optical and structural properties of InP quantum dots embedded in(AlxGa1−x)0.51In0.49P

scholarly article in Physical Review B, vol. 79 no. 3, January 2009

Optical investigations on single vertically coupled InP/GaInP quantum dot pairs

Optical properties of red emitting self-assembled InP/(Al0.20Ga0.80)0.51In0.49P quantum dot based micropillars

scientific article published in June 2010

Optical studies of GaInP/GaP quantum dots

Optical studies of GaxIn1-xP/Ga0.5In0.5P quantum dots

Phonon-assisted incoherent excitation of a quantum dot and its emission properties

scholarly article in Physical Review B, vol. 86 no. 24, December 2012

Polarization fine structure and enhanced single-photon emission of self-assembled lateral InGaAs quantum dot molecules embedded in a planar microcavity

Polarization-entangled photons from an InGaAs-based quantum dot emitting in the telecom C-band

Postselected indistinguishable single-photon emission from the Mollow triplet sidebands of a resonantly excited quantum dot

scholarly article in Physical Review B, vol. 87 no. 24, June 2013

Publisher's Note: “On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides” [Appl. Phys. Lett. 107, 021101 (2015)]

Pulsed layer growth of AlInGaN nanostructures

Pulsed single-photon resonant-cavity quantum dot LED

Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structures

Quantum dot based mode-locked AlGaInP-VECSEL

Quantum frequency conversion of visible single photons from a quantum dot to a telecom band

Quantum key distribution using quantum dot single-photon emitting diodes in the red and near infrared spectral range

article

Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs

Red VCSEL for automotive applications

Red VCSEL for high-temperature applications

Red high-temperature AlGaInP-VCSEL

Red light VCSEL for high-temperature applications

Red single-photon emission from an InP∕GaInP quantum dot embedded in a planar monolithic microcavity

Red to green photoluminescence of InP-quantum dots in InP

Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature

Reducing vortex losses in superconducting microwave resonators with microsphere patterned antidot arrays

scholarly article by D. Bothner et al published 2 January 2012 in Applied Physics Letters

Regions of Different Confinement in Low-DimensionalAlyInxGa1−x−yNQuantum Structures

Room-temperature lasing of electrically pumped red-emitting InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in a vertical microcavity

SESAM mode-locked red AlGaInP semiconductor disk laser emitting at 665 nm

Schemes for efficient QW pumping of AlGaInP disk lasers

Selective growth of GaInN quantum dot structures

Selective growth of GaInN quantum dot structures

Self-mode-locked AlGaInP-VECSEL

Semiconductor membrane external-cavity surface-emitting laser (MECSEL)

Short wavelength red-emitting AlGaInP-VECSEL exceeds 1.2 W continuous-wave output power

Simultaneous Faraday filtering of the Mollow triplet sidebands with the Cs-D1 clock transition.

scientific article

Simultaneous filtering of the Mollow triplet sidebands via a Cs-based Faraday filter

Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm

Single-photon emission at 1.55 μm from MOVPE-grown InAs quantum dots on InGaAs/GaAs metamorphic buffers

Single-photon emission from a type-B InP∕GaInP quantum dot

Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001).

scientific article published on 30 July 2012

Site-controlled growth of InP/GaInP islands on periodic hole patterns in GaAs substrates produced by microsphere photolithography

Smooth transition into stimulated emission of InP quantum dots based high-Q microdisk cavities

Spectral features in different sized InGaN/GaN micropyramids

Spectrally and time-resolved cathodoluminescence microscopy of semipolar InGaN SQW on (11$\overline {2} $2) and (10$\overline {1} $1) pyramid facets

Spectroscopy of theD1transition of cesium by dressed-state resonance fluorescence from a single (In,Ga)As/GaAs quantum dot ⬇️

scholarly article in Physical Review B, vol. 90 no. 12, September 2014

Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs

Strong antibunching from electrically driven devices with long pulses: A regime for quantum-dot single-photon generation

scholarly article in Physical Review B, vol. 86 no. 11, September 2012

Strong mode coupling in InP quantum dot-based GaInP microdisk cavity dimers

Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm

Structural and optical characterization of AlyInxGa1–x –yN quantum dots

Study of as deposited metal contacts for n-SiC

Technology transfer of (Ga)InP-quantum dots

Temperature Dependent Photoluminescence Measurements of Single InP Quantum Dots

Temperature-dependent properties of single long-wavelength InGaAs quantum dots embedded in a strain reducing layer

The optically pumped semiconductor membrane external-cavity surface-emitting laser (MECSEL): a concept based on a diamond-sandwiched active region

The phase boundary of superconducting niobium thin films with antidot arrays fabricated with microsphere photolithography

scholarly article by D Bothner et al published 4 May 2012 in Superconductor Science and Technology

Thin-film mid-infrared semiconductor waveguide technology

Three-dimensional GaN for semipolar light emitters

Time- and locally resolved photoluminescence of semipolar GaInN∕GaN facet light emitting diodes

Time-resolved and single dot spectroscopy of type II InP/GaInP quantum dots

Transverse mode and polarization characteristics of AlGaInP-based VCSELs with integrated multiple oxide apertures

Transverse-Mode Analysis of Red-Emitting Highly Polarized Vertical-Cavity Surface-Emitting Lasers

Triggered single-photon emission from electrically excited quantum dots in the red spectral range

Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K

UV laser emission around 330 nm via intracavity frequency doubling of a tunable red AlGaInP-VECSEL

Ultra-sensitive mid-infrared evanescent field sensors combining thin-film strip waveguides with quantum cascade lasers

scientific article

Vertical asymmetric double quantum dots

Vertically stacked and laterally ordered InP and In(Ga)As quantum dots for quantum gate applications

Visible-to-Telecom Quantum Frequency Conversion of Light from a Single Quantum Emitter

scientific article published in Physical Review Letters

Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm

Wavelength tunable ultraviolet laser emission via intra-cavity frequency doubling of an AlGaInP vertical external-cavity surface-emitting laser down to 328 nm