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List of works by Czeslaw Skierbiszewski

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Barrier between localized and shallow neutral donor states in GaAs:Ge

scientific article published on 01 November 1995

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Blue Laser Diodes by Low Temperature Plasma Assisted MBE

Blue Laser Diodes by Low Temperature Plasma Assisted MBE

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

scientific article published in May 2010

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

scientific article published in February 2008

Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Experimental studies of the conduction-band structure of GaInNAs alloys

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

scientific article published in March 2019

GaN/AlGaN based transistors for terahertz emitters and detectors

article

GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

scientific article published on 9 February 2006

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

scientific article published in 2006

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Hydrogen diffusion in GaN:Mg and GaN:Si

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

scientific article published in September 2019

Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

scientific article published on 5 September 2013

Influence of the growth method on degradation of InGaN laser diodes

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

Nitride light-emitting diodes for cryogenic temperatures

scientific article published on 01 September 2020

Nitride-based laser diodes and superluminescent diodes

article

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Plasmon-cyclotron resonance in two-dimensional electron gas confined at theGaN∕AlxGa1−xNinterface

scholarly article in Physical Review B, vol. 76 no. 4, July 2007

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

scientific article published on 01 March 2020

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Stacking faults in plastically relaxed InGaN epilayers

scientific article published on 11 February 2020

Surface potential barrier inm-plane GaN studied by contactless electroreflectance

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays

article

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

article by Czeslaw Skierbiszewski et al published 19 October 2012 in Applied Physics Express

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

article by Czeslaw Skierbiszewski et al published 9 February 2018 in Applied Physics Express

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

Weak antilocalization and spin precession in quantum wells

scientific article published on 01 February 1996

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