A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD

Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene

AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

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Behavior of background impurities in thick 4H–SiC epitaxial layers

Carbon-tuned cathodoluminescence of semi-insulating GaN

Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers

Characterization of GaN/SiC Epilayers by Picosecond Four-Wave Mixing Technique

Deep levels in 4H-SiC layers grown by sublimation epitaxy

Effect of impurity incorporation on crystallization in AlN sublimation epitaxy

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Feasibility of novel (H3C)nX(SiH3)3-n compounds (X = B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations.

scientific article published on February 2015

Growth of 6H and 4H–SiC by sublimation epitaxy

Growth of silicon carbide: process-related defects

scholarly article by R. Yakimova et al published December 2001 in Applied Surface Science

High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN

Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Investigation of domain evolution in sublimation epitaxy of SiC

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers

Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum

Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

Microhardness of 6H-SiC Epitaxial Layers Grown by Sublimation

Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface

scientific article published on 22 September 2020

Negative-U behavior of the Si donor in Al0.77Ga0.23N

On the behavior of silicon donor in conductive AlxGa1-xN (0.63 ≤x≤ 1)

Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

scientific article published on 26 March 2019

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study

Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy

Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi₃ (X  =  B, Al, Ga, and In) sheets

scientific article published on 16 November 2015

Stable and metastable Si negative-U centers in AlGaN and AlN

Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers

Stress related morphological defects in SiC epitaxial layers

Structural impact of LPE buffer layer on sublimation grown 4H–SiC epilayers

Structural properties of 6H-SiC epilayers grown by two different techniques

Sublimation epitaxy of AlN on SiC: growth morphology and structural features

Superior material properties of AlN on vicinal 4H-SiC

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

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Tuning band inversion symmetry of buckled III-Bi sheets by halogenation.

scientific article published on 11 January 2016

Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structures

Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

scientific article published on 23 February 2016