(Invited) Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools

scholarly article by Yuanyuan Shi et al published 8 August 2014 in ECS transactions

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device

scientific article published on 25 May 2016

Breakdown time statistics of successive failure events in constant voltage-stressed Al2O3/HfO2 nanolaminates

article published in 2015

Compatibility of co-tunneling and power-law models of soft breakdown current in MOS structures

Effect of the Electric Discharge Confinement on the Perforation Density of Porous Materials

article published in 2010

Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors

Electrical characterization of multiple leakage current paths in HfO 2 /Al 2 O 3 -based nanolaminates

Exploring the field-effect control of breakdown paths in lateral W/HfO 2 /W structures

Field-effect control of breakdown paths in HfO2 based MIM structures

Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks

Initial leakage current related to extrinsic breakdown in HfO2/Al2O3 nanolaminate ALD dielectrics

Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo Simulator

scientific article

Modeling the Post-Breakdown Current in MOS devices on p-silicon substrate

Modeling the breakdown statistics of Al 2 O 3 /HfO 2 nanolaminates grown by atomic-layer-deposition

Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition

Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory

scientific article published on 25 November 2013

Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method

Simulation of thermal reset transitions in resistive switching memories including quantum effects

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

Soft breakdown in irradiated high-κ nanolaminates

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

scientific article published on 23 December 2014

Stress Conditions to Study the Reliability Characteristics of High-k Nanolaminates

Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors

Study of the admittance hysteresis cycles in TiN/Ti/HfO 2 /W-based RRAM devices

Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices

Threshold Switching and Conductance Quantization in Al/HfO2/Si(p) Structures

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

scientific article published on 14 October 2013