List of works - Katharina Lorenz

Al1−xInxN/GaN bilayers: Structure, morphology, and optical properties

scientific article published on 8 June 2010

Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

scientific article published on 30 September 2015

Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State

scientific article published on 24 August 2006

Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Cathodoluminescence of rare earth implanted AlInN

Concurrent segregation and erosion effects in medium-energy iron beam patterning of silicon surfaces

scientific article published on 24 May 2018

Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D0 to 7F1 transition

Depth profiling of ion-implanted AlInN using time-of-flight secondary ion mass spectrometry and cathodoluminescence

Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

Doping of Ga2O3bulk crystals and NWs by ion implantation

Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination

scientific article published on 9 May 2011

Europium doping of zincblende GaN by ion implantation

Europium-doped GaN(Mg): beyond the limits of the light-emitting diode

scholarly article by K. P. O'Donnell et al published February 2014 in Physica Status Solidi C: Current Topics in Solid State Physics

Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

Free electron properties and hydrogen in InN grown by MOVPE

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

scientific article published on 15 October 2010

GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

High temperature annealing of Europium implanted AlN

scientific article published in October 2010

High temperature annealing of rare earth implanted GaN films: Structural and optical properties

High-temperature annealing and optical activation of Eu-implanted GaN

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results

scientific article published on 22 September 2018

Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor

scientific article published on 03 February 2017

Identification of the prime optical center inGaN:Eu3+

scholarly article in Physical Review B, vol. 81 no. 8, February 2010

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

scholarly article by A. Das et al published 3 May 2010 in Applied Physics Letters

Influence of neutron irradiation and annealing on the optical properties of GaN

scientific article published on 14 February 2012

Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped AlxGa1−xN (0⩽x⩽1) alloys

scientific article published in February 2009

Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots

scientific article published on 7 May 2010

Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation

article published in 2006

Luminescence of Eu ions inAlxGa1−xNacross the entire alloy composition range

article

Luminescence spectroscopy of Eu-implanted zincblende GaN

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

scientific article published on 8 April 2015

Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice

scientific article published in April 2010

Optical and structural properties of Eu-implanted InxAl1−xN

Optical and structural studies in Eu-implanted AlN films

scientific article published in October 2006

Optical doping and damage formation in AlN by Eu implantation

scientific article published on 15 January 2010

Optical energies of AlInN epilayers

Optical properties of high-temperature annealed Eu-implanted GaN

Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure.

scientific article published on 4 September 2015

Quantitative Chemical Mapping of InGaN Quantum Wells from Calibrated High-Angle Annular Dark Field Micrographs

scientific article

Quantum well intermixing and radiation effects in InGaN/GaN multi quantum wells

scientific article published on 26 February 2016

Rapid thermal annealing of rare earth implanted ZnO epitaxial layers

scientific article published in May 2011

Rare earth co-doping nitride layers for visible light

scientific article published in June 2012

Rare earth doping of III-nitride alloys by ion implantation

Relaxation of compressively strained AlInN on GaN

Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures

scientific article published on 27 November 2013

Selectively excited photoluminescence from Eu-implanted GaN

Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content

scientific article published on 27 September 2016

Sequential multiple-step europium ion implantation and annealing of GaN

Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers

scientific article published on 28 August 2016

Structural and optical properties of Ga auto-incorporated InAlN epilayers

Studying electronic properties in GaN without electrical contacts using γ-γ vs e--γ Perturbed Angular Correlations

scientific article published on 31 October 2019

The role of the annealing temperature on the optical and structural properties of Eu doped GaN/AlN QD