A phenomenological model for the macroscopic characteristics of irradiated silicon

Annealing effects on resistivity and hall coefficient of neutron irradiated silicon

CV and Hall effect analysis on neutron irradiated silicon detectors

Deep levels profile in neutron irradiated silicon detectors

Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect

scientific article published on 20 March 2018

Development of radiation tolerant semiconductor detectors for the Super-LHC

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

scientific article published on 15 July 2020

Evaluation of charged pions induced damage in the CMS silicon forward detectors

article published in 1997

GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

scientific article published on 04 December 2020

Hall effect analysis in irradiated silicon samples with different resistivities

Hall effect analysis on neutron irradiated high resistivity silicon

Hall effect measurements on proton-irradiated ROSE samples

Influence of radiation-induced clusters on transport properties of silicon

scientific article

Microscopic modelling of defects production and their annealing after irradiation in silicon for HEP particle detectors

Model predictions for the NIEL of high energy pions in Si and GaAs

Non-ionising energy loss of pions in thin silicon samples

article published in 1997

Radiation damage on p-type silicon detectors

Radiation-hard semiconductor detectors for SuperLHC

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis

article published in 1996

Silicon detectors for the sLHC

Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

scientific article

Studies of deep levels in high resistivity silicon detectors irradiated by high fluence fast neutrons using a thermally stimulated current spectrometer

Theoretical calculations of the primary defects induced by pions and protons in SiC