1950°C Annealing of Al + Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

1950°C Post Implantation Annealing of Al+Implanted 4H-SiC: Relevance of the Annealing Time

About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al)

Al + Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

Al + Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC

Carbon-Cap for Ohmic Contacts on Ion-Implanted 4H–SiC

Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC

Characterization of Phosphorus Implanted n + /p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p+n junctions

Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

Damage profiles in as-implanted silicon: fluence dependence

Damage profiles in as-implanted 〈100〉 Si crystals: strain by X-ray diffractometry versus interstitials by RBS-channeling

EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon

Erratum to: “Damage profiles in as-implanted 〈100〉 Si crystals: strain by X-ray diffractometry versus interstitials by RBS-channeling” [Nucl. Instr. and Meth. B 120 (1996) 64–67]

scholarly article published in Nuclear Instruments & Methods in Physics Research B

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

Improving Doping Efficiency of P + Implanted Ions in 4H-SiC

Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors

Microwave Annealing of Al + Implanted 4H-SiC: Towards Device Fabrication

Radiation Hardness of Minimum Ionizing Particle Detectors Based on SiC p/sup +/n Junctions

Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p/sup +/n junctions

Structural and Functional Characterizations of Al+Implanted 4H-SiC Layers and Al+Implanted 4H-SiCp-nJunctions after 1950°C Post Implantation Annealing