Atomic ordering and phase separation in MBE GaAs1−xBix

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Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy

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Chemical structure of vanadium-based contact formation on n-AlN

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Coherent acoustic phonon generation in GaAs1−xBix

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Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN

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Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy

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Development of lattice-matched 1.7 eV GalnAsP solar cells grown on GaAs by MOVPE

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Direct-indirect crossover in GaxIn1-xP alloys

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Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix

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Effects of bismuth on wide-depletion-width GaInNAs solar cells

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Electron Hall mobility in GaAsBi

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Improved performance of GaInNAs solar cells grown by molecular-beam epitaxy using increased growth rate instead of surfactants

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In situ strain relaxation comparison between GaAsBi and GaInAs grown by molecular-beam epitaxy

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Intermixing and chemical structure at the interface between n-GaN and V-based contacts

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Kinetically limited growth of GaAsBi by molecular-beam epitaxy

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Low temperature photoluminescence from dilute bismides

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Low-misfit epilayer analyses using in situ wafer curvature measurements

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Microstructure of vanadium-based contacts on n-type GaN

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Optical anisotropy and charge-transfer transition energies in BiFeO3from 1.0 to 5.5 eV

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Oxidation and characterization of AlInP under light-soaked, damp heat conditions

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Rapid, enhanced IV characterization of multi-junction PV devices under one sun at NREL

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Resonant state due to Bi in the dilute bismide alloyGaAs1−xBix

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Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

scientific article published on 13 April 2020

Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe-ZnO Tunnel Junction

scientific article published on 10 January 2017

Triple-halide wide-band gap perovskites with suppressed phase segregation for efficient tandems

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Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

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Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition

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