A new method to perform in situ current voltage curves with an electrochemical scanning tunnelling microscope

Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages

Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

Breakdown of SiO2 films in VLSI MOS structures

Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy

Carrier transport and storage in Si3N4 for metal-nitride-oxide-semiconductor memory applications

Characterization of the metal-SiO2-Si interface roughness by electrical methods

article published in 1987

Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

Comparison of SiO2 and HfO2∕SiO2 gate stacks electrical behaviour at a nanometre scale with CAFM

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

scholarly article by V. Iglesias et al published 27 December 2010 in Applied Physics Letters

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Current-limiting and ultrafast system for the characterization of resistive random access memories.

scientific article published in June 2016

Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

Degradation and Breakdown of Gate Oxides in VLSI Devices

Effects of the field dependent occupation of electrical-stress-generated traps on the conduction and breakdown of thin SiO/sub 2/ films

Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

article by Marc Porti et al published 15 February 2002 in Journal of Applied Physics

Electrochemical modifications at the nanometer scale on Si(100) surfaces with Scanning Tunnelling Microscopy

Field induced nanomodification on silicon (100) with scanning tunneling microscopy

article published in 1995

Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM

Growth of Si nuclei on SiO2 for quantum dot memory applications

Implanted and irradiated SiO[sub 2]∕Si structure electrical properties at the nanoscale

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

scientific article

MOS-based nanocapacitor using C-AFM

Modification of HF‐treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions

article published in 1992

Morphologic and spectroscopic characterization of porous PtGaAs Schottky diodes by scanning tunnelling microscopy

Nanometer scale lithography of silicon(100) surfaces using tapping mode atomic force microscopy

Nanoscale Modification of H-Terminated n-Si(100) Surfaces in Aqueous Solutions with an in Situ Electrochemical Scanning Tunneling Microscope

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

scientific article published on 01 October 2010

On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures

On the SiSiO2 interface roughness in VLSIMOS structures

On the breakdown statistics of thin SiO/sub 2/ films

On the breakdown statistics of very thin SiO2 films

On the oxide interface micro-roughness in MOS devices

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics ⬇️

scientific article published on January 31, 2011

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

Scanning near-field optical microscope for the characterization of optical integrated waveguides

Simple STM theory

article by Nuria Barniol et al published January 1990 in Vacuum

SiSiO2 interfacial atomic scale roughness caused by inhomogeneous thermal oxidation

Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics

The Thermal Growth of Very Thin SiO2 Films A Diffusion-Controlled Process

The measurement of the tip current noise as a method to characterize the exposed area of coated ESTM tips

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements