List of works - Marc Porti

(Invited) Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools

scholarly article by Yuanyuan Shi et al published 8 August 2014 in ECS transactions

Analysis of Factors in the Nanoscale Physical and Electrical Characterization of High-K Materials by Conductive Atomic Force Microscope

Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy

Combined Nanoscale and Device-Level Degradation Analysis of $\hbox{SiO}_{2}$ Layers of MOS Nonvolatile Memory Devices

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures

scholarly article by V. Iglesias et al published 27 December 2010 in Applied Physics Letters

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Electrical and mechanical performance of graphene sheets exposed to oxidative environments

Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope

article by Marc Porti et al published 15 February 2002 in Journal of Applied Physics

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Graphene-coated atomic force microscope tips for reliable nanoscale electrical characterization.

scientific article

Implanted and irradiated SiO[sub 2]∕Si structure electrical properties at the nanoscale

Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter

scientific article

Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM

scholarly article by M. Lanza et al published September 2007 in Microelectronics and Reliability

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

scientific article published on 21 June 2019

Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor

scientific article published on 26 February 2015

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

scientific article published on 12 September 2012

Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM

Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

scientific article published on 01 October 2010

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics ⬇️

scientific article published on January 31, 2011

Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale

List of works by Marc Porti